2SK4065-DL-1E

2SK4065-DL-E SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 7

Technical content

Features

• ON-resistance R DS(on)1=4.6mΩ (typ.) • Input capacitance Ciss=12200pF (typ.)
• 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 75 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 100 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 400 A Allowable Power Dissipation P D 1.65 W Tc=25°C 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 735 mJ Avalanche Current *2 I AV 70 A Note : *1 VDD=30V , L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Package Dimensions unit : mm (typ) 7535-001

53012 TKIM TC-00002767/41006QA MSIM TB-00002239

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network 2, 4 K4065 LOT No. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TO-263-2L 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.750.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 12 3 Product & Package Information

• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel Packing Type: DL Marking Electrical Connection DL 2SK4065-DL-1E

No. A0324-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 75 V Zero-Gate Voltage Drain Current I DSS V DS=75V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=50A 47 78 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=50A, VGS=10V 4.6 6.0 m Ω RDS(on)2 I D=50A, VGS=4V 5.7 8.0 m Ω Input Capacitance Ciss VDS=20V, f=1MHz 12200 pF Output Capacitance Coss 950 pF Reverse Transfer Capacitance Crss 730 pF Turn-ON Delay Time td(on) See Fig.2 80 ns Rise Time tr 460 ns Turn-OFF Delay Time td(off) 930 ns Fall Time tf 640 ns Total Gate Charge Qg VDS=35V, VGS=10V, ID=100A 220 nC Gate-to-Source Charge Qgs 40 nC Gate-to-Drain “Miller” Charge Qgd 50 nC Diode Forward Voltage VSD IS=100A, VGS=0V 0.9 1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SK4065-DL-1E TO-263-2L 800pcs./reel Pb Free 50Ω10V ≥50Ω VDD L 2SK4065 PW=10μs D.C.≤1% P. G 50Ω G S D ID=50A RL=0.7Ω VDD=35V VOUT 2SK4065 VIN 10V VIN

No. A0324-3/7 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A IT10698 --25 °CTc=75 200 120 100 160 140 180 IT10699 200 140 120 100 160 180 Tc=25°C Single pulse VGS=3V 10V VDS=10V Single pulse8V Tc= --25 RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Diode Forward V oltage, VSD -- V Source Current, IS -- A IT10701 --50 --25 150 IT10703IT10702 0.1 1.0 23 5 7 10023 5 7 1.0 0.01 0.1 1.0 100 100 2 1035 7 0 25 50 75 100 125 ID=50A Single pulse Tc=75°C 25°C --25°C Tc= --25 25°C 75°C VDS=10V Single pulse Tc=75 --25 VGS=0V Single pulse IT10704 0.1 7 1.023 5 2 7 1035 2 100 1000 td(off) td(on) VDD=35V VGS=10V tr IT10700 13 24 5 6 7 1 0 890 tf ID=50A, V GS=4V ID=50A, V GS=10V 7 10035 Single pulse Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF 03 0 10 15 20 255 IT10756 10k Ciss Crss f=1MHz Coss

No. A0324-4/7 IT10881 0.1 1.0 0.1 ID=100A 100 μs 1ms10ms 100msDC operation Operation in this area is limited by RDS(on). 1.023 5 7 2 10023 5 7 21035 7 10μs 100 1000 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V IT10705 0 50 200 150 250100 VDS=35V ID=100A 20 40 60 80 100 120 2.0 140 160 1.65 1.5 1.0 0.5 IT10707 25 50 75 100 125 150 100 120 175 IT10709 20 40 60 80 100 120 100 140 160 IT10708 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IDP=400A(PW≤10μs)

No. A0324-5/7 Taping Specifi cation 2SK4065-DL-1E

No. A0324-6/7 Outline Drawing Land Pattern Example 2SK4065-DL-1E Mass (g) Unit 1.5 * For reference mm Unit: mm

PS No. A0324-7/7 This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.