2SK4044 SANYO

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Load switching applications.
  • A valanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 100 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 400 A Allowable Power Dissipation P D Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 850 mJ Avalanche Current *2 I AV 70 A Note :*1 VDD =30V , L=200µH, IAV =70A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Marking : K4044 Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 51607QA TI IM TC-00000688 SANYO Semiconductors DATA SHEET 2SK4044 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0214-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =50A 45 75 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =50A, VGS =10V 3.3 4.3 m Ω R DS (on)2 I D =50A, VGS =4V 4.7 6.6 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 12500 pF Output Capacitance Coss V DS =20V, f=1MHz 1200 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 950 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 80 ns Rise Time t r See specified Test Circuit. 630 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 860 ns Fall Time t f See specified Test Circuit. 750 ns Total Gate Charge Qg V DS =30V, VGS =10V, ID =100A 220 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =100A 31 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =100A 55 nC Diode Forward Voltage V SD IS=100A, VGS =0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7002-001 Switching Time Test Circuit Avalanche Resistance Test Circuit 6.2 7.8 8.2 0.2 0.44.2 1.0 1.0 5.08 2.542.54 8.4 10.0 1.2 0.3 0.6 0.6 0.7 7.8 5.2 6.210.0 6.0 2.5 1 2 1 : Gate 2 : Source 3 : Drain SANYO : ZP PW=10 µs D.C.≤1% P. G 50Ω G S D ID =50A R L=0.6Ω VDD =30V VOUT 2SK4044 VIN 10V VIN 50Ω10V ≥50Ω VDD L 2SK4044

No. A0214-3/4 R DS (on) -- VGS R DS (on) -- Tc ID -- VDS ID -- VGS Ciss, Coss, Crss -- VDS IS -- VSDyfs -- ID SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A 03 0 10 15 20 255 IT10474 IT10472 0.01 0.1 1.0 100 10k --25 °CTc= 75°C Tc= --25 V GS =0V Ciss Crss IT10473 0.1 7 1.023 5 2 7 1035 2 100 1000 td(off) td(on) V DD =30V V GS =10V f=1MHz tr IT10468 200 140 120 100 160 180 V DS =10V tf Coss 7 10035 IT12244 IT12242 --50 --25 150 IT12245 0.1 1.023 5 7 1.0 100 2 1035 7 2 10035 7 02 5 5 0 7 5 100 125 200 120 100 160 140 180 IT12243 324 5 6 7 1 0 89 Tc=25°C V GS =3V 10V ID=50A, V GS =4V ID =50A, V GS =10V ID =50A Single pulse Tc=75°C 25°C --25°C Tc= --25°C 25°C 75°C V DS =10V Single pulse Single pulse

No. A0214-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. IT10475 05 0 200150 250100 V DS =30V ID =100A 20 40 60 80 100 120 140 160 IT10477 VGS -- Qg PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta A valanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C IT12246 0.1 1.0 100 0.1 10µs100 µs 100ms 10ms 1ms DC operation 1.0 1023 5 7 23 5 7 7 2 10035 1000 Operation in this area is limited by RDS (on). ID =100A IDP =400A PW ≤10µs A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Note on usage : Since the 2SK4044 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice.