2SK4005-01MR FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 18
Technical content
D WG.NO. SPECIFICATION Device Name : Type Name : Spec. No. : Date : H04-004-05 2SK4005-01MR MS5F5984 MS5F5984 1 / 18 Power MOSFET Jan.-31-2005 Fuji Electric Device Technology Co.,Ltd. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Jan.-31-'05 Jan.-31-'05 Jan.-31-'05
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 2 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Revised Records Date Classification Index Content Drawn Checked Checked Approved enactmentJan.-31 2005
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 3 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 1.Scope This specifies Fuji Power MOSFET 2SK4005-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F Outview See to 8/18 page 5.Absolute Maximum Ratings at Tc=25C (unless otherwise specified) Description Symbol Characteristics Unit Remarks VDS 900 V VDSX 900 V VGS=-30V Continuous Drain Current ID A Pulsed Drain Current IDP ± 24.0 A Gate-Source Voltage VGS ± 30 V IAR 6.0 A EAS mJ EAR mJ Maximum Drain-Source dV/dt dVDS/dt kV/μs Peak Diode Recovery dV/dt dV/dt kV/μs Tc=25°C
2.16 Ta=25°C
Operating and Storage Tch 150 C Temperature range Tstg -55 to +150 C Isolation Voltage VISO kVrms 6.Electrical Characteristics at Tc=25 C (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. max. Unit Drain-Source ID=250μA Breakdown Voltage BVDSS VGS=0V 900 - - V Gate Threshold ID=250μA Voltage VGS(th) VDS=VGS 2.5 - 3.5 V Zero Gate Voltage VDS=900V VGS=0V Tch=25°C - - 25 Drain Current IDSS VDS=720V VGS=0V Tch=125°C - - 250 Gate-Source VGS= ± 30V Leakage Current IGSS VDS=0V - - 100 nA Drain-Source ID=3A On-State Resistance RDS(on) VGS=10V - 1.92 2.50 Ω μA Note *1 Non-Repetitive Maximum Avalanche Energy Note *4
40 VDS
2 t=60sec f=60Hz WMaximum Power Dissipation PD Repetitive and Non-repetitive Maximum Avalanche Current 487 Repetitive Maximum Avalanche Energy 7.0 6.0 Drain-Source Voltage Note *2 Note *3
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 4 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Dynamic Ratings Description Symbol Conditions min. typ. max. Unit Forward ID=3A Transconductance gfs VDS=25V 4.5 9.0 - S Input Capacitance Ciss VDS=25V - 900 1350 Output Capacitance Coss VGS=0V - 100 150 Reverse Transfer f=1MHz 5.5 8.5 pF Capacitance Crss - td(on) Vcc=600V - 12 18 Turn-On Time tr VGS=10V - 5.6 8.4 td(off) ID=3A - 38 57 ns Turn-Off Time tf RGS=10Ω - 11.0 17 Total Gate Charge QG Vcc=450V - 25 38 Gate-Source Charge QGS ID=6A - 6.5 9.8 nC Gate-Drain Charge QGD VGS=10V - 7.0 10.5 Reverse Diode Description Symbol Conditions min. typ. max. Unit Diode Forward IF=6.0A On-Voltage VSD VGS=0V Tch=25°C - 0.86 1.30 V Reverse Recovery IF=6.0A Time trr VGS=0V - 1.3 - μs Reverse Recovery -di/dt=100A/μs Charge Qrr Tch=25°C - 8.0 - μC 7.Thermal Resistance Description Symbol min. typ. max. Unit Channel to Case Rth(ch-c) 1.786 C/W Channel to Ambient Rth(ch-a) 58 C/W Note *1 : Tch 150°C, See Fig.1 and Fig.2 Note *2 : Starting Tch=25,IAS=3.0A,L=99mH,Vcc=50V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to the 'Maximum Avalanche Energy' graph of page 17/18. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Maximum Transient Thermal impedance' graph of page 18/18. Note *4 : IF -ID,-di/dt=50A/μs,Vcc BVDSS,Tch 150°C
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 5 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Fig.1 Test circuit Fig.2 Operating waveforms 50¶ D.U.T L Vcc -15V BVDSS IDP VGS ID VDS +10V Vcc=90V Single Pulse Test
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 6 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only M OSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times) Test Test Testing methods and Conditions Reference Sampling Acceptance No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ (Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15 TO-3PL : 45N method 401 T-Pack,K-Pack : 10N Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ (Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15 TO-3PL : 15N method 401 T-Pack,K-Pack : 5N Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength TO-220,TO-220F : 40±10NEcm ED4701/400 15 TO-3P,TO-3PF,TO-247 : 50±10NEcm method 402 TO-3PL : 70±10NEcm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s 2 ED4701/400 15 Sweeping time : 4min. method 403 48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s 2 EIAJ
Duration time : 0.5ms ED4701/400 15 3times for each X,Y&Z directions. method 404 6 Solderability Solder temp. : 2455C Immersion time : 50.5sec Each terminal shall be immersed in ----- 15 the solder bath within 1 to 1.5mm from the body. 7 Resistance to Solder temp. : 2605C EIAJ Soldering Heat Immersion time : 101sec ED4701/300 15 Number of times : 1times method 302 Mechanical test methodsMechanical test methods
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 7 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Failure Criteria Symbols Unit Lower Limit Upper Limit Breakdown Voltage BVDSS LSL ----- V Zero gate Voltage Drain-Source Current IDSS ----- USL A Gate-Source Leakage Current IGSS ----- USL A Gate Threshold Voltage VGS(th) LSL USL V Drain-Source on-state Resistance RDS(on) ----- USL Forward Transconductance gfs LSL ----- S Diode forward on-Voltage VSD ----- USL V Marking Soldering ----- With eyes or Microscope ----- and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150°C. Item Failure Criteria Electrical CharacteristicsOutview Test Test Testing methods and Conditions Reference Sampling Acceptance No. Items Standard number number 1 High Temp. Temperature : 150+0/-5°C EIAJ 22 Storage Test duration : 1000hr ED4701/200 method 201 2 Low Temp. Temperature : -55+5/-0°C EIAJ 22 Storage Test duration : 1000hr ED4701/200 method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22 Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22 BIAS Bias Voltage : VDS(max) * 0.8 method 103 Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22 Vapor Vapor pressure : 230kPa method 103 Test duration : 48hr 6 Temperature High temp.side : 150±5°C/30min. EIAJ Cycle Low temp.side : -55±5°C/30min. ED4701/100 22 RT : 5°C \` 35°C/5min. method 105 Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C EIAJ 22 Low temp.side : 0+5/-0°C ED4701/300 Duration time : HT 5min,LT 5min method 307 Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating Tch Tch(max.) ED4701/100 22 Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1) Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max)*0.8 ED4701/100 22 Test duration : 1000hr method 101 Climatic test methodsEndurance test methods
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 8 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd.
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 9 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 9. Cautions ¥Although Fuji Electric is continually improving product quality and reliability , a small percentage of semiconductor products may become faulty . When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury , fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. ¥The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ¥Computers ¥OA equipment ¥Communications equipment(T erminal devices) ¥Machine tools ¥AV equipment ¥Measurement equipment ¥Personal equipment ¥Industrial robots ¥Electrical home appliancesetc. ¥The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability , and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. ¥Backbone network equipment ¥Transportation equipment(automobiles, trains, ships, etc.) ¥Traffic-signal control equipment ¥Gas alarms, leakage gas auto breakers ¥Submarine repeater equipment ¥Burglar alarms, fire alarms,emergency equipment ¥Medical equipment ¥Nuclear control equipmentetc. ¥Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): ¥Aerospace equipment ¥Aeronautical equipment 10.Warnings ¥The MOSFET s should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). ¥The MOSFET s may be destroyed if used beyond the rating. ¥We only guarantee the non-repetitive and repetitiveAvalanche capability and not for the continuous Avalanche capability which canbe assumed as abnormal condition .Please note the device may be destructed from theAvalanche over the specified maximum rating. ¥The equipment containing MOSFET s should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction(ex. fire, explosionetc…). ¥Use the MOSFET s within their reliability and lifetime under certain environments or conditions. The MOSFET s may fail before the target lifetime of your products if used under certain reliability conditions. ¥Be careful when handling MOSFET s for ESD damage.(Itis an important consideration.) ¥ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals. ¥It is recommended that any handling of MOSFET s is done on grounded electrically conductive floorand tablemats.
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 10 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. ¥Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) ¥When soldering, in order to protect the MOSFET s fromstatic electricity , ground the soldering iron or soldering bath through a low impedance resistor. ¥Y ou must design the MOSFET s to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. ¥Consider the possible temperature rise not only for the channel and case, but also for the outer leads. ¥Do not directly touch the leads or package of the MOSFET s while power is supplied or during operation in order to avoid electric shock and burns. ¥The MOSFET s are made of incombustible material. However, if a MOSFET fails, it may emit smokeor flame.Also, operating the MOSFET s near any flammable place or material may cause the MOSFET s to emit smoke or flame in case the MOSFET s become even hotter during operation. Design the arrangement to prevent the spread of fire. ¥The MOSFET s should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) ¥The MOSFET s shouldnot used in an irradiated environment since they are not radiation-proof. Installation ¥Soldering involves temperatures which exceed the device storage temperature rating. T o avoid device damage and to ensure reliability , observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature Duration 2605 C 101 seconds 35010C 3.50.5 seconds ¥The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. ¥When flow-soldering, be careful to avoid immersing the package in the solder bath. ¥Refer to the following torque referencewhen mounting the device on a heat sink.Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. T able 1: Recommended tightening torques. Package style Screw Tightening torques Note TO-220 TO-220F M3 30 –50 Ncm TO-3P TO-3PF TO-247 M3 40 –60 Ncm TO-3PL M3 60–80 Ncm flatness :< =±30m roughness: <=10m Plane off the edges: C<=1.0mm
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 11 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. ¥The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening torquewithin the limits of this specification. ¥ Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole.(Recommended plane off the edge is C<1.0mm) ¥We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage ¥The MOSFET s must be stored at a standard temperature of 5 to 35°C and relative humidity of 45 to 75%. ¥If the storage area is very dry , a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. ¥The MOSFET s should not be subjectedto rapid changes in temperature to avoid condensation on the surface of the MOSFET s. Therefore store the MOSFET s in a place where the temperature is steady . ¥The MOSFET s should not be stored on top of each other, since this may cause excessive external force on the case. ¥The MOSFET s should bestored with thelead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. ¥The MOSFET s should bestored in antistatic containers or shipping bags. 11.Appendix ¥Thisproductsdoesnot contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ), substances. ¥This products doesnot contain Class-I ODS and Class-II ODSsubstances set forceby ‘Clean Air Act of US’ law. ¥If you have any questions about any part of this Specification, pleasecontact Fuji Electric or its sales agent before using the product. ¥Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. ¥The application examples described in this specification aremerely typical uses of Fuji Electric products. ¥This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights.
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 12 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 0 25 50 75 100 125 150 100 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [C] 0 5 10 15 20 25 30 20V 5.5V 10V 6.0V 5.0V 4.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C VGS=4.0V
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 13 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 0.01 0.1 1 10 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 0 1 2 3 4 5 6 7 0.01 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 14 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 0 2 4 6 8 10 12 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.5V 5.0V RDS(on) [ ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 10V 20V 6.0V 4.5VVGS=4.0V -50 -25 0 25 50 75 100 125 150 RDS(on) [ ] Tch [C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 15 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A VGS(th) [V] Tch [C] 0 5 10 15 20 25 30 35 40 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25C VGS [V] 720V 450V Vcc= 180V
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 16 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. 0.1 IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 17 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 600 IAS=3A IAS=6A IAS=4A EAS [mJ] starting Tch [C] Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
D WG.NO. H04-004-03 Fuji Electric Device Technology Co.,Ltd. MS5F5984 18 / 18 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology Co.,Ltd. Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [C/W] t [sec]