2SK3982-01MR FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof High voltage

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=900V V GS=0V VDS=720V V GS=0V VGS=±30V ID=1.3A VGS=10V ID=1.3A VDS=25V VCC=600V ID=1.3A VGS=10V RGS=10 Ω V V µA nA Ω S pF nC V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 3.906 58.0 °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=450V ID=2.6A VGS=10V IF=2.6A VGS=0V Tch=25°C IF=2.6A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ mJ kV/µs kV/µs W W 900 3.0 5.0 250 100 4.8 6.4 1.3 2.6 330 495 44 66 2.5 5.0 10.5 15.8 6.5 9.8 28 42 20 30 13 19.5 4.5 6.5 4.3 6.8 1.00 1.50 1.5 4.0 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series 200511 VGS=-30V Note *1 Note *2 Note *3 VDS 900V Note *4 Tc=25°C Ta=25°C Min. Typ. Max. Units http://www.fujielectric.co.jp/fdt/scd/ =<=< Note *1 Tch 150°C Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 I F -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< TO-220F

2SK3982-01MR(900V/2.6A/6.4Ω) FUJI POWER MOSFET

FUJI POWER MOSFET2SK3982-01MR(900V/2.6A/6.4Ω)

http://www.fujielectric.co.jp/fdt/scd/ 2SK3982-01MR(900V/2.6A/6.4Ω)