2SK3980

2SK3980 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 0.9 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 3.6 A Allowable Power Dissipation P D Mounted on a ceramic board (250mm25 0.8mm) 0.9 W Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =0.5A 0.9 1.5 S R DS (on)1 I D =0.5A, VGS =4V 635 830 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =0.3A, VGS =2.5V 705 990 m Ω R DS (on)3 I D =0.1A, VGS =1.8V 850 1310 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 100 pF Output Capacitance Coss V DS =20V, f=1MHz 9.5 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 6.7 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 8.8 ns Rise Time t r See specified Test Circuit. 10.5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 21.5 ns Fall Time t f See specified Test Circuit. 15.8 ns Marking : LS Continued on next page.

No.8641-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =4V, ID =0.9A 2.1 nC Gate-to-Source Charge Qgs V DS =30V, VGS =4V, ID =0.9A 0.39 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =4V, ID =0.9A 0.28 nC Diode Forward Voltage V SD IS=0.9A, VGS =0V 0.91 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-003 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =0.5A R L=60Ω VDD =30V VOUT 2SK3980 VIN VIN 1 : Gate 2 : Drain 3 : Source SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View 0.4 0.6 0.8 1.0 0.2 1.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.6 0.9 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT07898 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT07899 1.5V V GS =1.0V 2.0 V 3.0 V 4.0 V 5.0 V 10.0 V 8.0 V 6.0 V V DS =10V --25 --25 Ta=75 Ta=75

No.8641-3/4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT07906 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT08299 0.01 0.1 1.023 5 5 77 32 100 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns IT07904 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT07902 0.01 0.1 1.023 5 5 77 23 1.0 0.1 Forward Transfer Admittance, yfs -- S yfs -- ID IT07903 0.001 0.01 0.1 1.0 Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD 0 5 10 15 20 25 30 100 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF IT07905 Ciss f=1MHz Crss Coss V DS =30V ID =0.9A V DS =10V Ta= --25 75°C 25°C --25 Ta=75 V GS =0V V DD =30V V GS =4V td(on) td(off) tr tf 1.0 0.1 0.01 0.10.01 1.0 10 1005723 5 7 23 5 7 23 5 7 23 ID =0.9A 100 µs 100msDC operation (Tc=25 °C) 10ms <10µsIDP =3.6A 1ms Tc=25°C Single pulse Mounted on a ceramic board (250mm25 0.8mm) Operation in this area is limited by RDS (on). - -60 - -40 - -20 0 20 40 60 80 100 120 160 140012 456 3 789 1 0 Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS IT07900 2000 1800 1600 1400 1200 1000 800 600 400 200 Ambient Temperature, Ta -- °C R DS (on) -- Ta IT07901 1400 200 400 600 800 1000 1200 Ta=25°C ID =0.5A ID =0.3A ID =0.5A, VGS =4.0V ID =0.3A, VGS =2.5V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ

No.8641-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS Note on usage : Since the 2SK3980 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT08300 Case Tamperature, Tc -- °C PD -- Tc Allowable Power Dissipation, PD -- W IT08301 20 40 0.2 1.0 60 80 100 120 140 160 0.4 0.6 0.8 0.9 Mounted on a ceramic board (250mm 250.8mm) 20 40 4.0 60 80 100 120 140 160 3.5 3.0 2.5 2.0 1.5 1.0 0.5 This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice.