2SK3979

2SK3979 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 200 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D 6A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 24 A Allowable Power Dissipation P D Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 200 V Zero-Gate Voltage Drain Current I DSS VDS =200V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±24V, VDS =0V ±1 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 2.0 3.2 V Forward Transfer Admittance yfs VDS =10V, ID =3A 2.1 3.5 S Static Drain-to-Source On-State ResistanceR DS (on) I D =3A, VGS =10V 320 450 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 1090 pF Output Capacitance Coss V DS =20V, f=1MHz 85 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 35 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 17.5 ns Rise Time t r See specified Test Circuit. 26 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 50 ns Fall Time t f See specified Test Circuit. 42 ns Marking : K3979 Continued on next page.

No. A0263-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =100V, VGS =10V, ID =6A 18.2 nC Gate-to-Source Charge Qgs V DS =100V, VGS =10V, ID =6A 8.0 nC Gate-to-Drain “Miller” Charge Qgd V DS =100V, VGS =10V, ID =6A 7.0 nC Diode Forward Voltage V SD IS=6A, VGS =0V 0.86 1.2 V Package Dimensions Package Dimensions unit : mm unit : mm 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A IT10503 01234 7 56 IT10504 Ta=25 --25 Ta=25 --25 24V V GS =4V V DS =10V 20V 15V 10V PW=10 µs D.C.≤1% P. G 50Ω G S D ID =3A R L=33.3Ω VDD =100V VOUT 2SK3979 VIN 10V VIN

No. A0263-3/4 IT10512 0.1 1.0 0.01 0.1 23 5 7 23 5 7 23 23 571.0 10 100 Operation in this area is limited by RDS (on). IDP =24A ID =6A ≤10µs 1ms 100 µs 100msDC operation ( Tc=25 °C) 10ms 0246 8 2 0 1210 16 18 14 IT10511 V DS =100V ID =6A VGS -- Qg A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V yfs -- ID IS -- VSD SW Time -- ID Ciss, Coss, Crss -- VDS R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Tc=25°C Single pulse 100 IT10509 IT10507 0.01 0.123 5 2 7 1.035 2 7 1035 7 0 5 10 15 20 25 30 100 1000 IT10510 IT10508 0.01 0.1 1.0 V GS =0V --25 Ta=75 td(on) td(off) tf tr V DD =100V V GS =10V Ciss Coss Crss f=1MHz 0.01 0.1 0.123 5 7 2 1.035 7 2 1035 7 1.0 V DS =10V 75°C 25°CTa= --25 IT10506 02468 2 4 10 12 14 16 20 18 22 IT10505 700 500 600 100 200 300 400 Ta=25°C V DS =10V - -60 300 200 100 700 400 500 600 - -40 - -20 0 20 40 60 80 100 120 140 160 ID=3A, V GS =10V 1000

No. A0263-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Note on usage : Since the 2SK3979 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PS Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta P D -- Tc 0 20 40 60 80 100 120 140 160 IT10513 0.2 0.4 0.6 0.8 1.2 1.0 0 20 40 60 80 100 120 140 160 IT10514 No heat sink This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice.