2SK3978

2SK3978 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 200 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 4A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 16 A Allowable Power Dissipation P D Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 200 V Zero-Gate Voltage Drain Current I DSS VDS=200V, VGS=0V 1 µA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=2A 3.2 5.3 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=2A, VGS=10V 420 550 m Ω RDS(on)2 I D=2A, VGS=4V 450 640 m Ω Marking: K3978 Continued on next page.

No. A0686-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS=20V, f=1MHz 950 pF Output Capacitance Coss V DS=20V, f=1MHz 44 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 26 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 12.2 ns Rise Time t r See specified Test Circuit. 8.4 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 96 ns Fall Time t f See specified Test Circuit. 32 ns Total Gate Charge Qg V DS=100V, VGS=10V, ID=4A 21 nC Gate-to-Source Charge Qgs V DS=100V, VGS=10V, ID=4A 2.8 nC Gate-to-Drain “Miller” Charge Qgd V DS=100V, VGS=10V, ID=4A 4.7 nC Diode Forward Voltage V SD IS=4A, VGS=0V 0.88 1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA PW=10µs D.C.≤1% 10V VIN P. G 50Ω G S ID=2A RL=50Ω VDD=100V VOUTVIN D 2SK3978

No. A0686-3/4 yfs -- ID Drain Current, ID -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF SW Time -- ID Switching Time, SW Time -- ns RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V RDS(on) -- Ta Ambient Temperature, Ta -- °C 1000 600 800 200 700 900 400 500 100 300 1200 800 400 200 1000 600 02 468 1 0 1 21 41 6 IT12065 IT12066 Ta=25°C ID =2A -- 6 0 --40 - -20 0 20 40 60 80 100 120 140 160 V GS =4V , I D=2A V GS =10V , I D=2A 0.1 1.0 7532753275320.01 0.1 1.0 10 0.01 0.1 1.0 0.001 --25 Ta =75 100 1000 01 0 2 03 04 05 06 07 08 09 0 100 Ciss Coss Crss IT12067 IT12068 IT12070 V DS =10V f=1MHz V GS =0V Ta= - -25 75°C 0.1 1.0 23 5 723 5 7 100 IT12069 td(off) td(on) V DD =100V V GS =10V tf tr 25°C ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 15V V DS =10V --25 Ta=75 IT12063 IT12064 10V V GS =3V

No. A0686-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the 2SK3978 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PS This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT12074 02 0 4 0 6 0 8 0 100 120 140 160 IT12073 02 0 4 0 6 0 8 0 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 No heat sink 05 1 0 15 20 25 V DS =100V ID =4A IT12071 IT12072 1.023 23 57 2 1035 7 2 0.1 0.01 0.1 1.0

2 DC operation (

Tc=25 °C) IDP =16A ID =4A ≤10µs 1ms 10ms 100ms 100 µs Operation in this area is limited by RDS (on). 10035 7 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- A Tc=25°C Single pulse