2SK3977

2SK3977 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 10 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation P D Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 100 V Zero-Gate Voltage Drain Current I DSS VDS=100V, VGS=0V 1 µA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=6A 6 10 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=6A, VGS=10V 70 92 m Ω RDS(on)2 I D=6A, VGS=4.5V 85 120 m Ω Input Capacitance Ciss V DS=20V, f=1MHz 1560 pF Output Capacitance Coss V DS=20V, f=1MHz 130 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 83 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 16 ns Rise Time t r See specified Test Circuit. 55 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 120 ns Fall Time t f See specified Test Circuit. 80 ns Continued on next page.

No. A0391-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS=50V, VGS=10V, ID=10A 34 nC Gate-to-Source Charge Qgs V DS=50V, VGS=10V, ID=10A 5.5 nC Gate-to-Drain “Miller” Charge Qgd V DS=50V, VGS=10V, ID=10A 6 nC Diode Forward Voltage V SD IS=10A, VGS=0V 0.95 1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 3.0V 6.0V 10.0V4.0V V DS =10V --25 Ta=75 IT10020 IT10021 8.0V V GS =2.5V PW=10µs D.C.≤1% 10V VIN P. G 50Ω G S ID=6A RL=8.33Ω VDD=50V VOUTVIN D 2SK3977

No. A0391-3/4 0.1 1.0 7532753275320.01 0.1 1.0 10 0.01 0.1 1.0 0.001 --25 Ta=75 1000 100 01 0 2 0 3 04 05 0 60 Ciss Coss Crss 05 1 0 15 20 25 30 35 V DS =50V ID =10A IT10024 IT10025 IT10027 IT10956 V DS =10V f=1MHz V GS =0V Ta= - -25 75°C 0.1 1.0 23 5 723 5 7 100 IT10026 td(off) td(on) V DD =50V V GS =10V tf tr 25°C yfs -- ID Drain Current, ID -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S IS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V SW Time -- ID Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- A IT10957 1.023 5 7 2 1035 7 2 1.0 0.1 0.1 Tc=25°C Single pulse Operation in this area is limited by RDS (on). DC operation ( Tc=25 °C) IDP =40A ID =10A PW ≤10µs 1ms 10ms 100ms 100 µs 10035 7 2 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V RDS(on) -- Ta Ambient Temperature, Ta -- °C 200 100 150 200 100 150 02 468 1 0 1 21 41 6 IT10954 IT10955 --60 - -40 - -20 0 20 40 60 80 100 120 140 160 Ta=25°C ID =6A V GS=4V , I D=6A V GS=10V , I D=6A

No. A0391-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Note on usage : Since the 2SK3977 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PS PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT10959 02 0 4 0 6 0 8 0 100 120 140 160 IT10958 02 0 4 0 6 0 8 0 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 No heat sink This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.