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Silicon MOSFET s (Small Signal) Publication date: December 2004 SJF00043AED 1 2SK3938 Silicon N-channel MOSFET For switching circuits Features Features High-speed switching High-speed switching SSSMini type package, allowing downsizing of the equipment and SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Absolute Maximum Ratings Absolute Maximum Ratings Ta = 25a = 25a °C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ±12 V Drain current ID 100 mA Peak drain current IDP 200 mA Power dissipation PD 100 mW Channel temperature TchTchT 125 °C Storage temperature TstgTstgT –55 to +125 °C Electrical Characteristics Electrical Characteristics Ta = 25a = 25a °C±3°C Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSSVDSSV ID = 10 µA, VGS = 0 30 V Drain-source cutoff current IDSS VDSVDSV = 20 V , VGS = 0 1.0 µA Gate-source cutoff current IGSS VGS = ±10 V , VDS10 V , VDS10 V , V = 0 ±10 µA Gate threshold voltage VTH ID = 1.0 µA, VDSA, VDSA, V = 3 V 0.5 1.0 1.5 V Drain-source ON resistance RDS(on)RDS(on)R ID = 10 mA, VGS = 2.5 V 7 12 Ω ID = 10 mA, VGS = 4.0 V 5 8 Forward transfer admittance Yfs ID = 10 mA, VDS = 3 V , f = 1 kHz 20 55 mS Short-circuit forward transfer capacitance (Common source) Ciss VDSVDSV = 3 V , VGS = 0, f = 1 MHz 12 pF Short-circuit output capacitance (Common source) Coss 10 pF Reverse transfer capacitance (Common source) Crss 6 pF Turn-on time * tontont VDDVDDV = 3 V , VGS = 0 V to 3 V , ID = 10 mA 350 ns Turn-off time * tofftofft VDDVDDV = 3 V , VGS = 3 V to 0 V , ID = 10 mA 350 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : ton , toff measurement circuitoff measurement circuitoff VDD = 3 V100 µF VGS = 0 V to 3 V VOUT 50 Ω 290 Ω VGS 90% 10% 10% 90% VOUT ton toffoffof Marking Symbol: 6U 1.20±0.050.52±0.03 0 to 0.01 0.15 max. 0.15 min. 0.80±0.050.15 min. Unit: mm 1: Gate 2: Source 3: Drain SSSMini3-F1 Package 0.33 (0.40)(0.40) 1 2 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02
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PD T T a Ta T Ia Ia D V V DS ID V V GS 0 40 80 120 120 2SK3938_ PD-Ta Power dissipation PD (mW) Ambient temperature Ta (°C) 0 4 8 12 120 2SK3938_ ID-VDS Drain current ID (A) Drain-source voltage VDS (V) 2.6 V 2.4 V 2.2 V 2.0 V VGS = 2.8 V Ta = 25°C 0 1 2 3 4 5 120 2SK3938_ ID-VGS Drain current ID (mA) Gate-source voltage VGS (V) VDS = 3 VTa = −25°C 25°C 85°C 0 1 2 3 120 2SK3938_ Yfs -VGS Forward transfer admittance Yfs (mS) Gate-source voltage VGS (V) VDS = 3 V Ta = −25°C 25°C 85°C 0 20 40 6 0 8 0 100 120 2SK3938_ Yfs -ID Forward transfer admittance Yfs (mS) Drain current ID (mA) VGS = 3 V Ta = 25°C 0 4 8 1 2 2SK3938_ RDS(on)-VGS Drain-source ON resistance RDS(on) (Ω) Gate-source voltage VGS (V) ID = 10 mA Ta = 85°C −25°C 25°C
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