2SK3930-01L FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingT ch=25°C,IAS=5A,L=32.2mH, V CC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:I F -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C See to P4
2SK3930-01L,S,SJ FUJI POWER MOSFET 0 25 50 75 100 125 150 120 160 200 240 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 5 10 15 20 25 20V 10V 7.5V 6.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C VGS=6V 0123456789 1 0 0.01 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.01 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7.5V 7.0VVGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V
2SK3930-01L,S,SJ FUJI POWER MOSFET - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 08 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25°C VGS [V] 480V 300V Vcc= 120V 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 IAS=5A IAS=7A IAS=11A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A
2SK3930-01L,S,SJ FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Outline Drawings (mm) Type(S) Type(SJ) 1 2 3 1 Type(L) 1 2 3 Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]