2SK3917-01MR FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=450V V GS=0V VDS=360V V GS=0V VGS=±30V ID=2.1A VGS=10V ID=2.1A VDS=25V VCC=300V ID=2.1A VGS=10V RGS=10 Ω V V µA mA nA Ω S pF nC V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 5.952 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=225V ID=4.3A VGS=10V IF=4.3A VGS=0V Tch=25°C IF=4.3A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ mJ kV/µs kV/µs W W kVrms 450 3.0 5.0 2.0 100 1.30 1.60 1.8 3.5 330 500 50 75 11 17.5 5.5 8.5 23 34.5 5.0 8.0 13.0 20 6.0 9.0 2.5 3.8 1.00 1.50 280 1.6 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series 200509 VGS=-30V Note *1 Note *2 Note *3 VDS 450V Note *4 Ta=25°C Tc=25°C t=60sec, f=60Hz =<=< Note *1 Tch 150°C Note *2 Starting Tch=25°C, IAS=1.8A, L=119mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =

2SK3917-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 2 4 6 8 10 12 14 16 18 20 22 7.0V 20V 10V 8.0V 6.5V 6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C VGS=5.5V 0.01 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.01 0.1 1 10 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 6.0V 6.5V 7.0V VGS= 5.5V -50 -25 0 25 50 75 100 125 150 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.1A,VGS=10V

2SK3917-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA VGS(th) [V] Tch [°C] 0 5 10 15 20 25 30 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=4.3A,Tch=25°C VGS [V] 360V 225V Vcc= 90V 100f 10p 100p C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 IAS=1.8A IAS=4.3A IAS=2.6A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V

2SK3917-01MR FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [ o C/W] t [sec]