2SK3913-01MR_05 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=250V V GS=0V VDS=200V V GS=0V VGS=±30V ID=7A VGS=10V ID=7A VDS=25V VCC=48V ID=7A VGS=10V RGS=10 Ω V V μA mA nA mΩ S pF nC V ns μC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 3.378 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-source breakdown voltage Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250μA VGS=0V ID= 250μA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=125V ID=14A VGS=10V IF=14A VGS=0V Tch=25°C IF=14A VGS=0V -di/dt=100A/μs Tch=25°C V V A A V A mJ mJ kV/μs kV/μs A/μs W W kVrms 250 3.0 5.0 2.0 100 220 280 51 0 780 1170 90 135 12 18 3 4.5 23 35 22 33 71 1 1.00 1.50 120 250 0.5 1.25 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series 200509 VGS=-30V Note *1 Note *2 Note *3 VDS 250V Note *4 Note *5 Ta=25°C Tc=25°C t=60sec, f=60Hz =< =<=< Note *1 Tch 150°C Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 I F -ID, -di/dt=100A/μs, Vcc BVDSS, Tch 150°C Note *5 IF -ID, -di/dt=100A/μs, Vcc BVDSS, Tch 150°C=< < =< http://www.fujielectric.co.jp/fdt/scd/

2SK3913-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 2 4 6 8 1 01 21 41 6 20V 10V 6.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C VGS=6V 0123456789 1 0 0.01 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 0 5 10 15 20 25 30 35 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C 10V 20V 7.5V 7.0VVGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V

2SK3913-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=14A,Tch=25 °C VGS [V] 200V 250V Vcc= 50V 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 350 IAS=5.6A IAS=8.4A IAS=14A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A

2SK3913-01MR FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]