2SK3912 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 10 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 40 A Allowable Power Dissipation P D Tc=25°C1 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =5A 4.5 7.5 S R DS (on)1 I D =5A, VGS =10V 50 65 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =5A, VGS =4V 65 92 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 790 pF Output Capacitance Coss V DS =20V, f=1MHz 115 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 88 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 10 ns Rise Time t r See specified Test Circuit. 35 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 72 ns Fall Time t f See specified Test Circuit. 55 ns Marking : K3912 Continued on next page.

No.8331-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =10V, ID =10A 16 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =10A 4 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =10A 3.4 nC Diode Forward Voltage V SD IS=10A, VGS =0V 1.0 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7516-004 123 8.0 1.6 0.8 0.7 2.4 4.8 0.75 4.0 11.015.5 7.53.0 1.51.7 1.0 1.4 1.0 3. 6 3.3 0.8 3.0 1 : Source 2 : Drain 3 : Gate SANYO : TO-126ML PW=10 µs D.C.≤1% P. G 50Ω G S D ID =5A R L=6Ω VDD =30V VOUT 2SK3912 VIN 10V VIN ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 2.0 2.5 3.0 3.5 4.0 5.0 4.5 0.2 0.30.1 1.0 1.5 0.5 IT05210 IT05211 V DS =10V Ta=75 °C --25 0.4 0.5 V GS =3.0V 3.5V 4.0V 5.0V10V 8.0V 6.0V

No.8331-3/4 VGS -- Qg A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V yfs -- ID IS -- VSD SW Time -- ID Ciss, Coss, Crss -- VDS R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF 02468 100 110 120 130 140 150 100 110 120 1210 14 16 IT09801 IT09802 - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 Ta=25°C ID =5A ID=5A, V GS =4V ID=5A, V GS =10V 100 1000 3010 15 20 255 IT05217 100 1.0 0.1 23 5 7 23 5 70.1 1.0 10 23 5 7 100 IT09805 1.0 0.1 1.023 5 7 1023 5 7 100 IT05216 IT09803 201614 181210428 6 IT09804 IT05214 0.01 1.0 0.123 5 7 1.0235 7 2 3 5 7 10 0.1 0.2 0.01 1.0 0.1 V GS =0V V DD =30V V GS =10V tf tr td(off) Operation in this area is limited by RDS (on). IDP =40A ID =10A <10 µs100 µs DC operation (Tc=25 °C) 1ms 100ms10ms V DS =10V Ta= --25 75°C 25°C Ta=75 --25 td(on) Crss Coss Ciss f=1MHz V DS =30V ID =10A Tc=25°C Single pulse

No.8331-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. Note on usage : Since the 2SK3912 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PS Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta P D -- Tc 20 40 0.2 0.4 0.6 80 100 120 0.8 1.0 1.2 140 160 IT09800 20 40 60 80 100 120 140 160 IT09806