2SK3891-01R FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero Gate Voltage Drain Current IDSS VDS=700V V GS=0V VDS=560V V GS=0V VGS=±30V ID=8.5A V GS=10V ID=8.5A VDS=25V VCC=600V ID=8.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.735 40.0 °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time t on Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=350V ID=17A VGS=10V IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A A mJ mJ kV/µs kV/µs W kVrms 700 3.0 5.0 250 100 0.47 0.60 6.0 12 1750 2625 250 375 13 19.5 20 30 16 24 60 90 20 30 46 69 14 21 17 26 1.10 1.50 -55 to +150 Outline Drawings (mm) www.fujielectric.co.jp/fdt/scd Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic 200407 VGS=-30V Note *1 Note *2 Note *3 V DS 700V Note *4 Tc=25°C Ta=25°C t=60sec f=60Hz Note *1:Tch 150°C Note *2:StartingTch=25°C,IAS=6.8A,L=37.7mH, VCC=100V,RG=50Ω E AS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C Gate(G) Source(S) Drain(D) =<=< =<

2SK3891-01R FUJI POWER MOSFET 0 25 50 75 100 125 150 100 150 200 250 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 4 8 1 21 62 0 6.0V 20V 10V 8.0V 6.5V VGS=5.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 6.0V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 8.0V6.5V VGS=5.5V -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V

2SK3891-01R FUJI POWER MOSFET - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25 °C VGS [V] 560V 350V Vcc= 140V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 200 400 600 800 1000 1200 IAS=6.8A IAS=10.2A IAS=17A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V

http://www .fujielectric.co.jp/fdt/scd/ 2SK3891-01R FUJI POWER MOSFET Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=100V Avalanche Current I AV [A] tAV [sec] 0 25 50 75 100 125 150 175 200 Repetitive Non-Repetitive (Single Pulse) IAV [A] starting Tch [°C] Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=100V Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]