2SK3889-01L FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) See to P4 Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=3.6A,L=65.4mH, V CC=60V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:I F -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C =<=< =<

2SK3889-01L,S,SJ FUJI POWER MOSFET 0 25 50 75 100 125 150 100 120 140 160 180 200 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 5 10 15 20 25 30 6.0V 20V 10V 8.0V 6.5V VGS=5.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 6.0V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 8.0V 6.5VVGS=5.5V -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V

2SK3889-01L,S,SJ FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 °C VGS [V] 480V 300V Vcc= 120V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 350 400 450 500 IAS=3.6A IAS=5.4A IAS=9A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V

2SK3889-01L,S,SJ FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Outline Drawings (mm) Type(S) Type(SJ) 1 2 3 1 Type(L) 1 2 3 Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=60V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]