2SK3880_06 TOSHIBA

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Technical content

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications

  • Low drain-source ON resistance: R DS (ON) = 1.35Ω (typ.)
  • High forward transfer admittance: |Yfs| = 5.2 S (typ.)
  • Low leakage current: IDSS = 100μA (max) (VDS = 640 V)
  • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) V DGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 6.5 Drain current Pulse (Note 1) I DP 19.5 A Drain power dissipation (Tc = 25°C) P D 80 W Single pulse avalanche energy (Note 2) EAR 375 mJ Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 3) E AR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 1.56 °C/W Thermal resistance, channel to ambient R th (ch-a) 41.6 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16F1B Weight: 5.8 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current IDSS V DS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 3.5 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 20 V, ID = 3.5 A 2.5 5.2 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 25 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 140 ⎯ pF Rise time tr ⎯ 35 ⎯ Turn-on time ton ⎯ 80 ⎯ Fall time tf ⎯ 50 ⎯ Switching time Turn-off time toff ⎯ 220 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 35 ⎯ Gate-source charge Qgs ⎯ 22 ⎯ Gate-drain (“Miller”) charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A ⎯ 13 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6.5 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 19.5 A Forward voltage (diode) VDSF I DR = 6.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1200 ⎯ ns Reverse recovery charge Qrr IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 11.5 ⎯ μC Marking Duty < = 1%, tw = 10 μs 0 V

10 VVGS

RL= 114 Ω VDD ∼ − 400 V ID = 3.5 A VOUT 50 Ω K3880 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

0.1 100 0.1 1 10 100 Common source VDS=20V Pulse test Ta=100℃ -55 048 1 2 1 6 2 0 Common source Ta=25℃ Pulse test ID=7A 3.5 1.5 02468 1 0 Common source VDS=20V Pulse test Ta=100℃ -55 0 10 20 30 40 50 VGS=4.5V 5.25 5.5 8,10 5.75 02468 1 0 VGS=4.5V 5.25 5.5 6Common source Tc ＝ 25°C Puls e tes t 8,10 0.10 1.00 10.00 0.01 0.1 1 10 Common source VGS=10V Tc=25℃ Pulse test ID − VDS ID − VDS ID − VGS VDS − VGS ⎪Yfs⎪ − ID RDS (ON) − ID DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN CURRENT I D (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST COMMON SOURCE VGS = 10 V Tc = 25°C PULSE TEST

VDD=100V 200V 400V Common source ID=6.5A Tc=25℃ Pulse test VDS 100 1000 10000 0.1 1 10 100 Ciss Coss CrssCommon source VGS=0V f=1MHz Tc=25℃ 100 120 0 40 80 120 160 0.1 Common source Tc=25℃ Pulse test VGS=0､-1V -80 -40 0 40 80 120 160 Common source VDS=10V ID=1mA Pulse test -80 -40 0 40 80 120 160 Common source VGS=10V Pulse test ID=1.5A RDS (ON) − Tc IDR − VDS CAPACITANCE – VDS Vth − Tc PD − Tc DYNAMIC INPUT/OUTPUT CHARACTERISTICS CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) CASE TEMPERATURE Tc (°C) CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Q g (nC) DRAIN REVERSE CURRENT I DR ( A ) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) GATE THRESHOLD VOLTAGE V th (V) CAPACITANCE C (pF) DRAIN−SOURCE VOLTAGE V DS (V) DRAIN POWER DISSIPATION P D ( W ) GATE−SOURCE VOLTAGE V GS ( V ) COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST COMMON SOURCE ID = 6.5 A Tc = 25°C PULSE TEST

0.001 0.01 0.1 0.1 0.0 0.0 0.0 SINGLE PULSE PDM t Ｔ DUTY = t/T Ｒ th (ch-c) = 1.56°C/W Duty = 0.5 0.2 100 150 200 250 300 350 400 25 50 75 100 125 150 0.01 0.1 100 1 10 100 1000 1 ms* DC OPERATION Tc = 25°C Ｉ ID MAX (CONTINUOUS) VDSS MAX 100 μs*ID MAX (PULSED) PULSE WIDTH t w ( S ) rth − tw EAS – Tch CHANNEL TEMPERATURE (INITIAL) T ch (°C) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) AVALANCHE ENERGY E AS (mJ) −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 16.1 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS SAFE OPERATING AREA DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN CURRENT I D (A) * SINGLE NONREPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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