2SK3822

2SK3822 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
• Motor drive, DC / DC converter.
• Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 52 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 208 A Allowable Power Dissipation P D 1.65 W Tc=25°C7 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Enargy (Single Pulse) *1 E AS 338 mJ Avalanche Current *2 I AV 52 A Note : *1 VDD =20V , L=200µH, IAV =52A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 100 V Zero-Gate Voltage Drain Current I DSS VDS =100V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =26A 24 40 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =26A, VGS =10V 19 25 m Ω R DS (on)2 I D =26A, VGS =4V 23 32 m Ω Marking : K3822 Continued on next page.

No.8014-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =20V, f=1MHz 6250 pF Output Capacitance Coss V DS =20V, f=1MHz 440 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 380 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 45 ns Rise Time t r See specified Test Circuit. 135 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 480 ns Fall Time t f See specified Test Circuit. 180 ns Total Gate Charge Qg V DS =50V, VGS =10V, ID =52A 117 nC Gate-to-Source Charge Qgs V DS =50V, VGS =10V, ID =52A 20 nC Gate-to-Drain “Miller” Charge Qgd V DS =50V, VGS =10V, ID =52A 25.8 nC Diode Forward Voltage V SD IS=52A, VGS =0 1.06 1.5 V Package Dimensions Package Dimensions unit : mm unit : mm 2093A 2090A Switching Time Test Circuit Unclamped Inductive Test Circuit 1 : Gate 2 : Drain 3 : Source SANYO : SMP 10.2 20.9 11.59.4 0.8 1.6 1.2 0.9 11.0 8.8 4.5 1.3 0.4 2.552.55 2.7 123 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =26A R L=1.92Ω VDD =50V VOUT 2SK3822 VIN 10V VIN 50Ω ≥50Ω RG DUT VDD L 15V 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 10.2 1.2 2.55 2.552.55 2.55 4.5 0 to 0.3 0.4 1.3 9.93.0 2.7 1.35 8.8 1.4 1.5max 0.8 0.8 123

No.8014-3/4 R DS (on) -- VGS IT07877 R DS (on) -- Tc IT07878 ID -- VDS IT07875 ID -- VGS IT07876 --50 --25 150 03 0 10 15 20 255 Ciss, Coss, Crss -- VDS 1000 10000 IT07882 IT07880 IF -- VSD IT07879 0.1 1.023 5 7 1.0 yfs -- ID 0.01 0.1 1.0 100 100 1023 5 7 3 5 7 2 100 345678921 0 0 25 50 75 100 125 V GS =3V 6V8V 10V Tc=25°C --25 Tc= --25 °C 75 Tc= V DS =10V ID =26A Tc=75°C 25°C --25°C ID=26A, V GS=4V ID=26A, V GS=10V Tc= --25 75°C 25°C V DS =10V Tc= --25 V GS =0 f=1MHz Coss Ciss Crss IT07881 0.1 1.0 23 5 723 5 7 23 5 7 10 100 1000 SW Time -- ID td(off) tf td(on) tr V DD =50V V GS =10V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Forward Current, IF -- A

No.8014-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. IT07811 IT07884 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 PD -- Ta 0.1 1.0 100 A S O 23 5 7 23 5 7 23 5 71.00.1 10 2100 IDP =208A ID =52A 100 µs1ms 10ms 100msDC operation 10µs Operation in this area is limited by RDS (on).IT07883 0 2 04 06 0 1 2 0 80 100 VGS -- Qg V DS =50V ID =52A IT07844 20 40 60 80 100 120 140 160 PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Note on usage : Since the 2SK3822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.