2SK3821 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • 4V drive.
  • Ultrahigh-speed switching.
  • Motor drive, DC / DC converter.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 40 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 160 A Allowable Power Dissipation P D 1.65 W Tc=25°C6 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Enargy (Single Pulse) *1 E AS 200 mJ Avalanche Current *2 I AV 40 A Note : *1 VDD =20V , L=200µH, IAV =40A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 100 V Zero-Gate Voltage Drain Current I DSS VDS =100V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =20A 18.5 31 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =20A, VGS =10V 25 33 m Ω R DS (on)2 I D =20A, VGS =4V 30 42 m Ω Marking : K3821 Continued on next page.

No.8058-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =20V, f=1MHz 4200 pF Output Capacitance Coss V DS =20V, f=1MHz 300 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 250 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 30 ns Rise Time t r See specified Test Circuit. 68 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 300 ns Fall Time t f See specified Test Circuit. 110 ns Total Gate Charge Qg V DS =50V, VGS =10V, ID =40A 73 nC Gate-to-Source Charge Qgs V DS =50V, VGS =10V, ID =40A 12.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =50V, VGS =10V, ID =40A 16 nC Diode Forward Voltage V SD IS=40A, VGS =0 1.0 1.2 V Package Dimensions Package Dimensions unit : mm unit : mm 2093A 2090A Switching Time Test Circuit Unclamped Inductive Test Circuit 1 : Gate 2 : Drain 3 : Source SANYO : SMP 10.2 20.9 11.59.4 0.8 1.6 1.2 0.9 11.0 8.8 4.5 1.3 0.4 2.552.55 2.7 123 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =20A R L=2.5Ω VDD =50V VOUT 2SK3821 VIN 10V VIN 50Ω ≥50Ω RG DUT VDD L 15V 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 10.2 1.2 2.55 2.552.55 2.55 4.5 0 to 0.3 0.4 1.3 9.93.0 2.7 1.35 8.8 1.4 1.5max 0.8 0.8 123

No.8058-3/4 R DS (on) -- VGS IT07867 R DS (on) -- Tc IT07868 ID -- VDS IT07865 ID -- VGS IT07866 --50 --25 150 03 0 10 15 20 255 Ciss, Coss, Crss -- VDS 100 1000 IT07872 IT07870 IF -- VSD IT07869 0.1 1.023 5 7 23 5 7 100 1.0 ‰yfs‰ -- ID 10 23 5 7 100 345678921 0 0 25 50 75 100 125 10000 V GS =3V 10V Tc=25°C --25 Tc= --25 Tc= V DS =10V ID =20A Tc=75°C 25°C --25°C ID=20A, V GS=4V ID=20A, V GS=10V Tc= --25 75°C 25°C V DS =10V f=1MHz Coss Ciss Crss IT07871 0.1 23 1.057 2 3 57 10 23 5 7 100 100 1000 td(off) td(on) tr V DD =50V V GS =10V tf Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, ‰yfs‰ -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mW Static Drain-to-Source On-State Resistance, RDS (on) -- mW Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Forward Current, IF -- A SW Time -- ID 1.20.3 0.6 0.90 0.01 0.1 1.0 100

2 Tc=

--25 V GS =0

No.8058-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. IT07811 IT07874 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 PD -- Ta 0.1 1.0 100 A S O 23 5 7 23 5 7 2 2 35 71.00.1 10 100 IDP =160A ID =40A 100 µs1ms 10ms 100msDC operation 10µs Operation in this area is limited by RDS (on). IT07873 01 0 2 0 4 0 30 50 60 80 70 VGS -- Qg V DS =50V ID =40A IT07833 20 40 60 80 100 120 140 160 PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Note on usage : Since the 2SK3821 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.