2SK3820 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • 4V drive.
  • Ultrahigh-speed switching.
  • Motor drive, DC / DC converter.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 26 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 104 A Allowable Power Dissipation P D 1.65 W Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Enargy (Single Pulse) *1 E AS 84.5 mJ Avalanche Current *2 I AV 26 A Note : *1 VDD =20V , L=200µH, IAV =26A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 100 V Zero-Gate Voltage Drain Current I DSS VDS =100V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =13A 11 19 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =13A, VGS =10V 45 60 m Ω R DS (on)2 I D =13A, VGS =4V 56 80 m Ω Marking : K3820 Continued on next page.

No.8147-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =20V, f=1MHz 2150 pF Output Capacitance Coss V DS =20V, f=1MHz 160 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 110 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 20 ns Rise Time t r See specified Test Circuit. 34 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 185 ns Fall Time t f See specified Test Circuit. 62 ns Total Gate Charge Qg V DS =50V, VGS =10V, ID =26A 44 nC Gate-to-Source Charge Qgs V DS =50V, VGS =10V, ID =26A 7.8 nC Gate-to-Drain “Miller” Charge Qgd V DS =50V, VGS =10V, ID =26A 9.8 nC Diode Forward Voltage V SD IS=26A, VGS =0V 1.0 1.2 V Package Dimensions Package Dimensions unit : mm unit : mm 7513-002 7001-003 Switching Time Test Circuit Unclamped Inductive Test Circuit PW=10 µs D.C.≤1% P.G 50Ω G S D ID =13A R L=3.85Ω VDD =50V VOUT 2SK3820 VIN 10V VIN 50Ω15V ≥50Ω RG VDD L 2SK3820 10.2 8.811.0 2.7 11.5(9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.552.55 1.2 1 : Gate 2 : Drain 3 : Source SANYO : SMP 10.2 8.8 1.5MAX2.7 9.93.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.552.55 0 to 0.3 12 3 2.552.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD

No.8147-3/4 R DS (on) -- VGS IT07857 R DS (on) -- Tc IT07858 ID -- VDS IT07855 ID -- VGS IT07856 --50 --25 150 03 0 10 15 20 255 Ciss, Coss, Crss -- VDS 1000 100 IT07862 IT07860 IS -- VSD IT07859 0.1 1.023 5 7 1.0 yfs -- ID 1023 5 7 23 5 345678921 0 120 100 110 130 100 110 120 0 25 50 75 100 125 V GS =3V 10V Tc=25°C --25 Tc= --25 Tc= V DS =10V ID =13A Tc=75°C 25°C --25°C ID=13A, V GS =4V ID=13A, V GS=10V Tc= --25 75°C 25°C V DS =10V f=1MHz Coss Ciss Crss IT07861 0.1 23 1.057 2 3 57 2 3 5 10 100 SW Time -- ID td(off) tf td(on)tr Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A 0.01 0.1 1.0 100

2 Tc=

--25 V GS =0V V DD =50V V GS =10V

No.8147-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. IT07811 IT07864 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 PD -- Ta 0.1 1.0 100 A S O 23 5 7 23 5 7 23 5 71.00.1 10 2100 IDP =104A ID =26A 100 µs 1ms 10ms 100msDC operation 10µs Operation in this area is limited by RDS (on). IT07863 0 5 10 20 15 25 30 50 40 4535 VGS -- Qg V DS =50V ID =26A IT07822 20 40 60 80 100 120 140 160 PD -- Tc Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain to Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.