2SK3788-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero Gate Voltage Drain Current IDSS VDS=150V V GS=0V VDS=120V V GS=0V VGS=±30V ID=46A VGS=10V ID=46A VDS=25V VCC=48V ID=46A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.305 50.0 °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time t on Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=75V ID=92A VGS=10V IF=92A VGS=0V Tch=25°C IF=92A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ mJ kV/µs kV/µs W 150 3.0 5.0 250 100 21 26 12 24 3800 5400 530 795 35 52.5 40 60 112 168 56 84 30 45 80 120 30 45 25 38 1.20 1.50 250 2.0 -55 to +150 Outline Drawings (mm) www.fujielectric.co.jp/fdt/scd Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic 200406 VGS=-30V Note *1 Note *2 Note *3 V DS 150V Note *4 Tc=25°C Ta=25°C Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=37A,L=1.29mH, V CC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph Note *4:I F -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C Gate(G) Source(S) Drain(D) =<=< =<

2SK3788-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 05 1 0 100 120 140 20V 10V 8V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 1 4 0 0.00 0.05 0.10 0.15 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7V6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=36.5A,VGS=10V

2SK3788-01 FUJI POWER MOSFET - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 1 4 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=92A,Tch=25 °C VGS [V] 120V 75V Vcc= 30V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100 1000IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 200 400 600 800 1000 1200 1400 IAS=37A IAS=56A IAS=92A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=92A

2SK3788-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]