2SK377K

2SK377 SANYO

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a 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications ©3334 cs Features . » Especially suited for use in audio, telephone capacitor microphones. « High lyfs) « Excellent voltage characteristic. Absolute Maximum Ratings at Ta=25°C unit Gate-Drain Voltage Vepo 20 v Gate Current Ig 10 mA Allowable Power Dissipation Pp . 100 sow Junction Temperature Tj 125 °% Storage Temperature Tstg : 55 to +125 °C Blectrical Characteristics at Ta=25°C min typ max unit Drian Current. Ings Yps=5V1Vgg=0 . 60* 800* uA “:The 2SK377 is classified by drain current Ipgg as follows (unit:uA): . [60 3 180 | J 180 | 150 K ~ 300 250 L 500 | 400 M _ 800| [Ta=25°C, Vog=4.5V,R.=1kohm,cin=15pF, specified Test Circuit min typ max unit Transmission Loss Gy = fetkHz,V,,=1000V 73.5 aB Reduced Voltage Characteristic Abyy £21kHz, Vj ,=100mV 3 «dB Vocr.5 bo 1.5V Frequency Response Gye £oficiztot 1082, V,,,2100nV -1 «4B Input Impedance Zy, f=1kHz 18.0 Mohn Output Impedance Z, f=1kHz 1.0 kohn Total Harmonic Distortion tho f21kHz, Vj .=100mV 3 a & Output Noise Voltage Vyo Vin20s4 curve “110 «dB Specified Test Circuit Transmission loss Frepuency response Distortion Reduced voltage characteristic . Case Outline 2026 (unit: mm) “fj . » Vert. sno: pps” "H ca Xu cht t spool: For output impedance Wart Bet l@-S! source ra

10 10 ~ Vos, 04 __1o = Vos ake , OAs CT | ge vert tt TEP) oa fry CEELELLn @ FEEEECSEEEE) ecco 3 “Hee 3 of LET oe EE esfetttier tte 8 MATE i fer sot | | {Lt feo PET A EECCSCCC get z seer] eer TTT OCCCPPP ee) 6 EERE ° Drain Source Voutage Vos v ® ° Drain Source “votese,pg ~ v " Ip - Ves A a NG - Ipss Py [eg PRE ttn Ltt tT TT TAS gt} aie, ~ CCE se bate | LTT HEHE wt at TT BG mene oc Te ae | | eee | 08 07 -06 -05 04-03-02 01 0° i On 1.0 Gate-Source Voltage, Vg -Vv Drain Current Ings - mA . 5 5 AGyV - Ipss Mic THO - Toss . aii] [Tl [7] eff Pree elTL TINUL] ¢ Ne Be | TN #7] Ln Ee pat t TT IN| gt IN frees $- . 3 NE 5 2 o = VkHZ 1.0 gc] gis rt a , prain Current,Ipgg= mA Brain Current Ipgg - aA” rn 2i = Toss 200 Zo - Toss___

2 Vin= 100aV 1190 Vy = 1000

fe ton cof ogg | |_| [seen $ IN 2 Fal oN fait i | tT ese) REE 600 I, Be] CHEETA BLT TT ie & 3.4) 1 [| fl bas ot 1.0 “ on 10 Drain Current, Ings = mA ., Drain CurrentsIpgs ~ mA

2 <0 VNo ~ Ipss 4 lyfsi ~ 108s a 57 Vy ? Vpg= 4-50 a T Yq 1? Vpg=av] ' | | NO Eovtourve! «Fh. te Side Sone ALE LOK g Toss ? Ypg=5V - Toga ? Vpg=5-0V g3 ; +1 iit] [| 2-1 a i | Poe ca fe | | Ty: PITT ; jc cae or 10 i T o4 a 5 7 Vo Drain Current,Ipgs = mA « Drain Current,Ipgs - mA A Transmission Loss, = f ae Ves(off) - Ipss Cin= 15] Vos=5V D a nd Voor 87, ‘ RL=TkQ eh Sho -° 8 i git} [i tty. g-2 = i HELE 3 j a HH : eet] Tt Te | LE LEE LTE | 3 ai mo 22 > 22 > wo 22 > om CI Ot To Frequency,f = Hz Drain Current, Ipgg - mA a Pp-Ta . : - e -2aeen Fee a LH CoCr oo a eee -aeeen : Sof PT rrr Pr rr a CENT - 3 “COCO EE EEE ; TEEH-PN EEEEEEE PEECEEEPNS EH BEEEEEEE NCEE @ tt NECA 2"CCCCreey FEERNEH : § COCOONS : hr rd ae dq Ambient Temperature,Ta - °C Sample Application Circuit: 2-wire type ; . . tke Vor . . a 2y oureut : . input ISP . .

CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS @All of Sanyo lead formed small signal transistor case outlines are illustrated below. @All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. @No marking is indicated. Case Outline~[2003A} unit: mm Case Outline—[2019A] unit: mm 20 0.64 20, 0.46 0,45 i 045, i iL i Fe 2 bs i 045 q| 14 045, : JEDEC: 70-92 B. Base EIAJ : S$C-43 C. Collector JEDEC: TO-92 D: Drain SANYO: NP E. pmitter EIAJ : SC-43 G: Gate fs SANYO: NP S: Source Case Outline~[2004A] unit: mm Case, Outline—[2025] unit: mm q——p = 20 0.44 | § 0.45 tt rt a = | | ad 5 ri Le 0.65 . ‘| = I J q ‘ Hy elles 16.0 Leo Sata at . JEDEC: TO-92 C. Collector = EIAJ + SC-43 E, Emitter [> = lst ; Gate SANYO: NP B. Base 2 bere Case Outline=[2006A] unit: mm Case Quttine—[2026) unit: mm

2.0 O46 “ | 3 of

ous ; sno: es E ity i 39 4 | = peal nel “Enk 5.0 14.0 40 aa tere JEDEC: TO-92 G: Gate o: prain EIAJ : SC-43 S: Source (2 & @\\ple & source SANYO: NP D: Drain 7 Case Outline—[2006A] unit: mm Case Outline-[2027A] unit: mm 20 mG wees. es i SADE i FN a i 8 ogpeISg u as | fT slp Loos %0. = aN = : EIAJ: sc-51 B: Base fpoue\\ ob cree SANYO: MP C1 Collector { 4 81 Source 7 Et Emitter ‘Ts "TH" SANYO: DP6A

Case Outline—[2029A] unit: mm Case Outline—[2061] unit: mm T-91-20 a aim 20 Obs ef et. 4s Satie TH 5 Piha! ' 3 Drowsy ib on ed Ar A Lssl-— 4.0 40-01" yi Y -2 JEDEC: 10-92 C: Collector WoW XM es enitter sc-43 B: Base LV G: collector BIAJ + Sc E: Emitter Ta as SANVO:PGA. . SANYO: NP” Case Outline= [2033] unit: mm 22 Case Outline~[2064] unit: mm, pepe ae 0. Te ae ty OD Pf Fl iS 0.4 B: Base OG C: Collector kr naitter E: Emitter - Siemty Rese SANYO: SPA wl | Lan sanvos NMP Case Outline—[2034] unit: mm ao a 7 = 8 3 | oe D: Drain ™ G: Gate S: Source : SANYO: SPA Case Outline-[2040] unit: mm ey : peop . Dee te “ Ih é Ok G: Gate ° - S$: Source Bo ee ee D: Drain SANYO: SPA Case Outline—[2051] unit: mm a e| fe Vey 3 I C: Collector 0.4 7 7 E: Emitter 5 B: Base