2SK3779-01R FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) =<=< =<
2SK3779-01R FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 05 1 0 100 120 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 0.00 0.05 0.10 0.15 0.20 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=29.5A,VGS=10V
2SK3779-01R FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=59A,Tch=25 °C VGS [V] 200V 125V Vcc= 50V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100 1000IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 2 55 07 5 1 0 0 1 2 5 1 5 0 200 400 600 800 1000 1200 IAS=24A IAS=36A IAS=59A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A
2SK3779-01R FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]