2SK3778-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero Gate Voltage Drain Current IDSS VDS=250V V GS=0V VDS=200V V GS=0V VGS=±30V ID=29.5A VGS=10V ID=29.5A VDS=25V VCC=72V ID=29.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.305 50.0 °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time t on Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=150V ID=59A VGS=10V IF=59A VGS=0V Tch=25°C IF=59A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ mJ kV/µs kV/µs W 250 3.0 5.0 250 100 43 53 12 24 3800 5400 530 795 35 52.5 40 60 62 93 70 105 20 30 80 120 30 45 25 38 1.20 1.50 370 4.5 -55 to +150 Outline Drawings (mm) www.fujielectric.co.jp/fdt/scd Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic 200406 VGS=-30V Note *1 Note *2 Note *3 V DS 250V Note *4 Tc=25°C Ta=25°C Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=24A,L=3.25mH, V CC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph Note *4:I F -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C Gate(G) Source(S) Drain(D) =<=< =<

2SK3778-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 05 1 0 100 120 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 0.00 0.05 0.10 0.15 0.20 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=29.5A,VGS=10V

2SK3778-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=59A,Tch=25 °C VGS [V] 200V 125V Vcc= 50V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100 1000IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 200 400 600 800 1000 1200 IAS=24A IAS=36A IAS=59A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=59A

2SK3778-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]