2SK3775-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero Gate Voltage Drain Current IDSS VDS=300V V GS=0V VDS=240V V GS=0V VGS=±30V ID=16A VGS=10V ID=16A VDS=25V VCC=180V ID=16A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient Rth(ch-a) *1 channel to ambient 0.463 87.0 52.0 °C/W °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time t on Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=150V ID=32A VGS=10V IF=32A VGS=0V Tch=25°C IF=32A VGS=0V -di/dt=100A/µs Tch=25°C V V A A A V A mJ mJ kV/µs kV/µs W 300 3.0 5.0 250 100 0.10 0.13 12 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 44.5 67.0 18.0 27.0 13.5 20.5 0.90 1.50 270 3.0 -55 to +150 Outline Drawings (mm) www.fujielectric.co.jp/fdt/scd Super FAP-G Series G : Gate S2 : Source D : Drain S1 : Source N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic *1 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) 200406 Foot Print VGS=-30V Ta=25°C Note *2 Note *3 Note *4 V DS 300V Note *5 Tc=25°C Ta=25°C Note*1 Note *1:Surface mounted on 1000mm 2,t=1.6mm FR-4 PCB(Drain pad area:500mm 2) Note *2:Tch 150°C,Repetitive and Non-repetitive Note *3:StartingTch=25°C,IAS=13A,L=6.13mH, V CC=48V,RG=50Ω EAS limited by maximum channel temperature and avalanch current. See to the ‘Avalanche Energy’ graph Note *4:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Theemal impedance’ graph Note *5:I F -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C =<=< =<

2SK3775-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 25 50 75 100 125 150 100 200 300 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 4 8 12 16 20 24 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7V6.5VVGS=6V

2SK3775-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=16A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 08 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=32A,Tch=25°C VGS [V] 240V 150V Vcc= 60V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A]

2SK3775-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ 0 25 50 75 100 125 150 100 200 300 400 500 600 700 IAS=13A IAS=20A IAS=32A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] 0 1000 2000 3000 4000 5000 100Rth(ch-a) [°C/W] Drain Pad Area [mm Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]