2SK3770-01MR ETC2

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=11A,L=3.77mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:I F -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C=< =< =<

2SK3770-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0123456 6.0V 7.0V 7.5V 20V 10V 8.0V 6.5V VGS=5.5V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 0 0.04 0.08 0.12 0.16 0.20 0.24 7.5V6.0V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 20V 8.0V7.0V6.5VVGS=5.5V -50 -25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=13A,VGS=10V

2SK3770-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 5 10 15 20 25 30 35 40 Vcc=60V Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=26A,Tch=25 °C VGS [V] C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 350 400 IAS=11A IAS=16A IAS=26A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=26A

2SK3770-01MR FUJI POWER MOSFET http://www .fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]