2SK3753-01R FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IL=2.36mH,VCC=60V EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:I F -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C=< =< =<

2SK3753-01R FUJI POWER MOSFET 0 25 50 75 100 125 150 100 150 200 250 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 100ms 10ms 1ms 100µs 10µs Safe operating area ID=f(VDS):Single Pulse,Tc=25°C 1µs D.C. ID [A] VDS [V] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 20V 10V 7.5V 7.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C VGS=6.5V 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7.5V 7.0VVGS=6.5V

2SK3753-01R FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 08 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25°C VGS [V] 480V 300V Vcc= 120V 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A]

2SK3753-01R FUJI POWER MOSFET http://www .fujielectric.co.jp/fdt/scd/ 0 25 50 75 100 125 150 100 150 200 250 300 350 400 450 500 IAS=6A IAS=8A IAS=13A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V Single Pulse Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]