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Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching
  • High reliability (Adoption of HVP process)
  • Attachment workability is good by Mica-less package
  • Avalanche resistance guarantee Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 1500 V Gate-to-Source Voltage V GSS ±35 V Drain Current (DC) I D 2A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 4 A Allowable Power Dissipation P D 3.0 W Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 41 mJ Avalanche Current *2 I AV 2A Note : *1 VDD=50V , L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Package Dimensions unit : mm (typ) 7538A-002

52312 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018

High-Voltage, High-Speed Switching

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : TO-3PF-3L
  • JEITA, JEDEC : SC-94
  • Minimum Packing Quantity : 30 pcs./magazine Marking Electrical Connection K3747 LOT No. 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PF-3L 15.5 5.5 3.0 0.90.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.53.3 10.0 25.0 24.519.3 5.45 5.45 2.0 2SK3747-1E

No.7767-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current I DSS V DS=1200V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.5 3.5 V Forward Transfer Admittance | yfs | VDS=20V, ID=1A 0.7 1.4 S Static Drain-to-Source On-State Resistance RDS(on) I D=1A, VGS=10V 10 13 Ω Input Capacitance Ciss VDS=30V, f=1MHz 380 pF Output Capacitance Coss 70 pF Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time td(on) See Fig.2 12 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 152 ns Fall Time tf 59 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC Gate-to-Source Charge Qgs 2.7 nC Gate-to-Drain “Miller” Charge Qgd 20 nC Diode Forward Voltage VSD IS=2A, VGS=0V 0.88 1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SK3747-1E TO-3PF-3L 30pcs./magazine Pb Free 50Ω ≥50Ω VDD L 10V 2SK3747 PW=10μs D.C.≤0.5% P.G RGS=50Ω G S D ID=1A RL=200Ω VDD=200V VOUT 2SK3747 VIN 10V VIN

No.7767-3/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A ID -- VDS ID -- VGS IT07130 IT07131 4.0 3.5 3.0 2.5 2.0 1.5 50454010 3052 5 15 20 35 1.0 0.5 3.0 2.5 2.0 1.5 20181641 221 0 68 1 4 1.0 0.5 10V VGS=4V Tc= --25°C 25°C 75°C Tc=25°C pulse VDS=20V pulse Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID IT07132 IT07133 --50 --25 0 25 50 75 100 125 150 IT07135 0.01 0.1 1.0 IT07134 --25 Tc=75 0.135 7 2 35 7 2 3 1.0 1.0 0.1 VDS=20V 25°C Tc= --25 75°C VGS=0V ID=1A VGS=10V 20181641 221 0 68 1 4 ID=1A Tc=75°C 25°C --25°C Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT09037 VDD=200V VGS=10V td(off) tf tr td(on) IT09038 f=1MHz Ciss Coss Crss 100 0.1 1.0 23 5 7 23 0 100 1000 503051 5 2 0 2 5 3 5 4 0 4 510

No.7767-4/7 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A A S OVGS -- Qg IT07139IT07138 10 20 30 VDS=200V ID=2A 1.0 0.1 0.01 23 5 723 5 723 571.0 10 100 1000 32 Operation in this area is limited by RDS(on). 100 μs1ms 10ms 100ms ID=2A IDP=4A(PW≤10μs) DC operation Tc=25°C Single pulse Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta PD -- Tc IT07140 IT07141 20 40 0.5 1.0 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 20 40 80 100 120 140 160

No.7767-5/7 Magazine Specifi cation 2SK3747-1E

No.7767-6/7 Outline Drawing 2SK3747-1E Mass (g) Unit 5.5 * For reference mm

PS No. 7767-7/7 This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.