2SK3727-01 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=900V V GS=0V VDS=720V V GS=0V VGS=±30V ID=1.1A VGS=10V ID=1.1A VDS=25V VCC=600V ID=1.1A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.667 62.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=450V ID=2.2A VGS=10V L=48.2mH Tch=25°C IF=2.2A VGS=0V Tch=25°C IF=2.2A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 900 3.0 5.0 250 100 6.15 8.00 1.1 2.2 250 375 36 55 2.2 3.3 17 26 26 39 28 42 8.3 12.5 3.4 5.1 2.2 3.3 2.2 0.90 1.50 0.8 2.2 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< TO-220AB Gate(G) Source(S) Drain(D) 200305 *4 VDS 900V *5 VGS=-30V<= *1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C=<

2SK3727-01 FUJI POWER MOSFET 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 20V 7.0V 10V 6.5V 6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C VGS=5.5V 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 10gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 5.5 6.0 6.5 7.0 7.5 8.0 8.5 6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7.0V 6.0VVGS=5.5V -50 -25 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.1A,VGS=10V

2SK3727-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 2 4 6 8 10 12 14 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=2.2A,Tch=25°C VGS [V] 720V 450V Vcc= 180V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 IAS=1.0A IAS=2.2A IAS=1.4A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V

2SK3727-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=90V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]