2SK3723 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
Low on-resistance, low Qg High avalanche resistance For high-speed switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage V DSS 150 V Gate-source surrender voltage V GSS 30 V Drain current I D 30 A Peak drain current I DP 120 A Power dissipation 50 Power dissipation Ta = 25 3 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 PD W
www.kexin.com.cn2 SMD Type ICSMD Type Transistors 2SK3723 Marking Marking K3723 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-source surrender voltage V DSS ID =1m A ,VGS =0 1 5 0 V Gate threshold voltage V th VDS =2 5V ,ID =1m A 2 4 V Drain-source cutoff current I DSS VDS =1 2 0V ,VGS =0 1 0 0 ì A Gate-source cutoff current I GSS VGS = 30 V, VDS =0 1 ìA Drain-source ON resistance R DS(on) VGS =1 0V ,ID = 15 A 33 42 mÙ Forward transfer admittance Yfs VDS =2 5V ,ID =1 5A 8 1 8 S Short-circuit forward transfer capacitance C iss 2 900 pF Short-circuit output capacitance C oss 618 pF Reverse transfer capacitance C rss 91 pF Turn-on delay time t d(on) 32 ns Rise time T r 46 ns Turn-off delay time t d(off) 227 ns Fall time t f 66 ns Diode foward voltage V DSF IDR =3 0A ,VGS =0 - 1 . 5 V Reverse recovery time t rr L = 230 ìH, VDD = 100 V 130 ns Reverse recovery charge Q rr IDR =1 5A ,di/dt =1 0 0A / ì s 5 3 3 n C Gate charge load Q g 55.4 nC Gate-source charge Q gs 9.1 nC Gate-drain charge Q gd 22.4 nC Thermal resistance (ch-c) R th(ch-c) 2.5 /W Thermal resistance (ch-a) R th(ch-a) 89.2 /W VDS =2 5V ,VGS =0 ,f=1M H z VDD 100 V, ID =1 5A , RL =6 . 7Ù , VGS =1 0V VDD =1 0 0V ,ID =1 5A , VGS =1 0V