2SK3702JS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • A valanche resistance guarantee.
  • Pb-free type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 18 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 72 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 23 mJ Avalanche Current *2 I AV 18 A Note :*1 VDD =20V , L=100µH, IAV =18A *2 L≤100µH, Single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =9A 8 12 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =9A, VGS =10V 42 55 m Ω R DS (on)2 I D =9A, VGS =4V 60 85 m Ω Marking : K3702 Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. D1306QA TI IM TC-00000378 SANYO Semiconductors DATA SHEET 2SK3702JS N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0632-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =20V, f=1MHz 775 pF Output Capacitance Coss V DS =20V, f=1MHz 125 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 105 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11 ns Rise Time t r See specified Test Circuit. 65 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 75 ns Fall Time t f See specified Test Circuit. 70 ns Total Gate Charge Qg V DS =30V, VGS =10V, ID =18A 19 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =18A 2.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =18A 4.1 nC Diode Forward Voltage V SD IS=18A, VGS =0V 0.98 1.2 V Package Dimensions unit : mm (typ) 7525-002 Switching Time Test Circuit Avalanche Resistance Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID =9A R L=3.33Ω VDD =30V VOUT 2SK3702JS VIN 10V VIN 50Ω10V ≥50Ω VDD L 2SK3702JS 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 0.75 0.7 123 10.0 3.5 7.2 16.014.0 3.6 1.2 1.6 2.552.55 4.5 2.8 2.4 3.2

No. A0632-3/5 Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VDS IT06197 ID -- VGS IT06198 6123450 Tc=25°C 6V10V 8V Tc= --25 --25 Tc= 75°C °CV GS =3V V DS =10V Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Drain Current, ID -- A Switching Time, SW Time -- ns Cutoff V oltage, VGS (off) -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C R DS (on) -- VGS IT06199 R DS (on) -- Tc IT06200 140 120 140 120 100 10345678 --50 --25 0 25 50 75 100 125 1509 ID =9A Tc= 75°C 25°C 100 ID=9A, VGS=4V ID=9A, VGS =10V --25°C 0.1 1.023 5 7 1023 5 7 10023 5 7 100 1000 SW Time -- ID IT06204IT06203 0.01 100 0.1 1.0 IS -- VSD IT06202 23 5 735 7 2 1.0 310 1.0 yfs -- ID --50 --25 0 25 50 75 100 2.0 1.5 0.5 1.0 2.5 125 150 VGS (off) -- Tc IT06201 V DD =30V V GS =10V td(off) tf tr td(on) V DS =10V Tc= --25°C 25°C 75°C V GS =0V Tc=75 --25 V DS =10V ID =1mA

No. A0632-4/5 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V 100 1000 3051 5 2 02 510 Ciss, Coss, Crss -- VDS IT06205 2015105 VGS -- Qg IT06206 V DS =30V ID =18A f=1MHz Ciss Coss Crss Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Ambient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S O 100 1.0 0.1 23 5 7 23 5 7 23 5 70.1 1.0 10 100 IT06207 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 PD -- Ta IT06208 Operation in this area is limited by RDS (on). ID =18A IDP =72A DC operation PW<10 µs10µs100 µs 10ms 100ms 1ms 20 40 60 80 100 120 140 160 PD -- Tc IT06209 25 50 75 100 125 150 100 120 175 EAS -- Ta A valanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C

No. A0632-5/5PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. Note on usage : Since the 2SK3702JS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.