2SK3697-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) Note *2:StartingTch=25°C,L= 861µH,VCC=60V See to the ‘Avalanche Energy’ graph Note *3:IF -ID, -di/dt = 100A/µs,VCC BVDSS,Tch 150°C Note *4:IF -ID, -dV/dt = 5kV/µs,VCC BVDSS,Tch 150°C =< =< =< =< =<=<

2SK3697-01 FUJI POWER MOSFET 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 100 200 300 400 500 600 700 800 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 4 8 1 21 62 02 4 100 110 120 7.0V 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 2 04 06 08 0 1 0 0 0.0 0.1 0.2 0.3 0.4 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7.0V 6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=21A,VGS=10V

2SK3697-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 20 40 60 80 100 120 140 160 180 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=42A,Tch=25°C VGS [V] 480V 300V Vcc= 120V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 500 1000 1500 2000 2500 IAS=17A IAS=26A IAS=42A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=42A

2SK3697-01 FUJI POWER MOSFET http://www .fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] tAV [sec] 0 25 50 75 100 125 150 175 200 Repetitive Non-Repetitive (Single Pulse) IAV [A] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]