2SK3694-01L FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=450V V GS=0V VDS=360V V GS=0V VGS=±30V ID=8.5A VGS=10V ID=8.5A VDS=25V VCC=300V ID=8.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.556 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=225V ID=17A VGS=10V L=1.41mH Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 450 3.0 5.0 250 100 0.29 0.38 71 4 1275 1900 200 300 9.5 14 27 40 27 40 48 72 71 1 33 50 91 3 10.5 16 1.20 1.80 0.57 6.5 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< T-Pack Gate(G) Source(S) Drain(D) 200305 *4 VDS 450V *5 V GS=-30V<= *1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C=<

2SK3694-01L,S,SJ FUJI POWER MOSFET 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 048 1 2 1 6 2 0 20V 10V 7.5V 7.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C VGS=6.5V 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 10gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 5 10 15 20 25 30 35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 7.5V7.0VVGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V

2SK3694-01L,S,SJ FUJI POWER MOSFET 0 5 10 15 20 25 30 35 40 45 50 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25°C VGS [V] 360V 225V Vcc= 90V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 10IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 600 IAS=7A IAS=11A IAS=17A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C]

2SK3694-01L,S,SJ FUJI POWER MOSFET Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] http://www.fujielectric.co.jp/denshi/scd/ Outline Drawings (mm) Type(S) Type(SJ) 1 2 3 1 Type(L) 1 2 3