2SK3681-01 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Applications

Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V V GS=0V VDS=480V V GS=0V VGS=±30V ID=26A VGS=10V ID=21.5A VDS=25V VCC=300V ID=21.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.208 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=43A VGS=10V L=802µH Tch=25°C IF=43A VGS=0V Tch=25°C IF=43A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A A mJ kV/s kV/µs W 600 3.0 5.0 250 10 100 0.12 0.16 15 30 5360 8040 680 1020 40 60 80 120 87 131 190 285 44 66 112 168 34 51 40 60 1.00 1.50 0.98 22.0 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series 200401 VGS=-30V Tch=25°C Tch 150°C L=802µH V CC=60V *2 VDS 600V Ta=25°C Tc=25°C *1 See to Avalanche Current Graph *2 See to Avalanche Energy Graph *3 I F -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C<=<= <= 11.6±0.2

2SK3681-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 100 200 300 400 500 600 700 800 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 048 1 2 1 6 2 0 2 4 100 110 120 7.0V 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 2 04 06 08 0 1 0 0 0.0 0.1 0.2 0.3 0.4 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 20V 7.5V 6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=26A,VGS=10V

2SK3681-01 FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 20 40 60 80 100 120 140 160 180 200 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=43A,Tch=25 °C VGS [V] 480V 300V Vcc= 120V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100 1000IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 175 200 Repetitive Non-Repetitive (Single Pulse) IAV [A] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V

2SK3681-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ 0 2 55 07 5 1 0 0 1 2 5 1 5 0 500 1000 1500 2000 2500 IAS=18A IAS=26A IAS=43A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=43A Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] tAV [sec] Maxmum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]