2SK3679 FUJI
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DWG.NO. Fuji Electric Co.,Ltd. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. MA4LE Ĕěüčøùýøúççøöø ĚĬķõôø÷ôî÷ù ĚĬķõôø÷ôî÷ù Fuji Power MOSFET SuperFAP-G series Target SpecificationPRELIMINARY 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25@unless otherwise specified) Items Units Drain-Source Voltage V Continuous Drain Current A Pulsed Drain Current A Gate-Source Voltage V A mJ *1 Maximum Drain-Source dV/dt dV DS/dt kV/us Peak Diode recovery dV/dt dV/dt kV/us *2 W W Operating and Storage ˆ Temperature range ˆ 3)Electrical Characteristics (Tch=25 unless otherwise specified) Items Symbols Test Conditions min. typ. max. Units Drain-Source Breakdown Voltage BVDSS ID=250uA V GS=0V 900 --- --- V Gate Threshold Voltage VGS(th) I D=250uA V DS=VGS 3.0 --- 5.0 V VDS=900V T ch=25ˆ --- --- 25 ÊA VGS=0V T ch=125ˆ --- --- 250 ÊA Gate-Source Leakage Current IGSS VGS=±30V V DS=0V --- --- 100 nA Input Capacitance Ciss VDS=25V --- 1200 --- Output Capacitance Coss VGS=0V --- 140 --- pF Reverse Transfer Capacitance Crss f=1MHz --- 7 --- Total Gate ChargeQ g Vcc=450V --- 32 --- Gate to Source Charge Qgs ID=9A --- 7 --- nC Gate to Drain (Miller) Charge Qgd VGS=10V --- 7 --- Avalanche Capability IAV L=6.51mH Tch=25 ˆ 12 --- --- A Diode Forward On-Voltage VSD IF=9A,VGS=0V,Tch=25 --- 1.0 1.5 V 4) Thermal Characteristics Items Symbols Test Conditions min. typ. max. Units Channel to Case Rth (ch-c) 1.316 ˆ/W Channel to Ambient Rth(ch-a) 58.0 ˆ/W *1 L=6.51mH,Vcc=90V *2 IF≤-ID,-di/dt=50A/µs,Vcc≤BV DSS,Tch≤150°C Zero Gate Voltage Drain Current Drain-Source On-State Resistance VGS=10V --- IDSS RDS(on) I D=4.5A ¶--- 1.58 287.7 2.16 150 -55 \` +150 Ratings 900 ±36 Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Tch Tstg Maximum Power Dissipation PD @Ta=25 2SK3679-01MR (900V/1.58Ω /9A) VGS IAR EAS Symbols VDS ID ID(pulse) ±30