2SK3666_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Features

  • Small IGSS
  • Small Ciss Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSX 30 V Gate-to-Drain Voltage V GDS - -30 V Gate Current I G 10 mA Drain Current I D 10 mA Allowable Power Dissipation P D 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7013A-011

62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303

N-Channel Junctin Silicon FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications http://semicon.sanyo.com/en/network Product & Package Information

  • Package : CP
  • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TB 1 : Source 2 : Drain 3 : Gate SANYO : CP 1.5 2.51.1 0.3 0.05 2.9 0.95 0.4 0.1 0.50.5 1 2 JK LOT No. RANK LOT No. 2SK3666-2-TB-E 2SK3666-3-TB-E 2SK3666-4-TB-E

No.8158-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDS IG=- -10μA, VDS=0V - -30 V Gate Cutoff Current I GSS VGS=- -20V, VDS=0V - -1.0 nA Cutoff Voltage V GS(off) V DS=10V, ID=1μA - -0.18 - -0.95 - -2.2 V Drain Current I DSS V DS=10V, VGS=0V 0.6* 6.0* mA Forward Transfer Admittance | yfs | VDS=10V, VGS=0V, f=1kHz 3.0 6.5 mS Input Capacitance Ciss V DS=10V, VGS=0V, f=1MHz 4 pF Reverse Transfer Capacitance Crss V DS=10V, VGS=0V, f=1MHz 1.1 pF Static Drain-to-Source On-State Resistance RDS(on) VDS=10mV, VGS=10V 200 Ω * : The 2SK3666 is classifi ed by IDSS as follows : (unit : mA) Rank 2 3 4

Ordering Information

Device Package Shipping memo 2SK3666-2-TB-E CP 3,000pcs./reel Pb Free2SK3666-3-TB-E CP 3,000pcs./reel 2SK3666-4-TB-E CP 3,000pcs./reel ITR00633 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA 1.0 2.0 3.0 4.0 5.0 VGS=0V --0.1V --0.2V --0.3V --0.4V VGS=0V --0.1V --0.2V --0.3V --0.4V ITR00635 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA IDSS =5.0mA 3.0mA 1.0mA ITR00634 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA 0 5 10 15 20 25 300 ITR00636 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA VDS=10V VDS=10V Ta=--25 25°C 75°C

No.8158-3/6 0 20 40 60 80 100 120 140 160 200 120 160 240 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- mW ITR00646 VGS=0V f=1MHz 1.0 23 5 77 10 23 5 71.0 Drain-to-Source V oltage, VDS -- V Ciss -- VDS Input Capacitance, Ciss -- pF ITR00641 VGS=0V f=1MHz 1.0 23 5 77 10 23 5 7 1.0 Drain-to-Source V oltage, VDS -- V Crss -- VDS Output Capacitance, Crss -- pF ITR00642 G S D ID IGDL DC DC IDSS =1.0mA 5.0mA 3.0mA Cutoff V oltage, VGS(off) -- V ITR00637 VGS(off) -- IDSS Drain Current, IDSS -- mA 57 1.0 23 5 7 10 2 --1.0 VDS=10V ID=1.0μA ITR00638Drain Current, ID -- mA VDS=10V f=1kHz 0.1 5327532 1.0 327 10 1.0 ITR00639Drain Current, IDSS -- mA VDS=10V VGS=0V f=1kHz 53275 1.0 27 10 1.0 0 5 10 15 20 25 10p 100p 10n 100n Drain-to-Source V oltage, VDS -- V IGDL -- VDS Gate-to-Drain Leak Current, IGDL -- A ITR00640 ID=1mA | yfs | -- ID Forward Transfer Admittance, | yfs | -- mS | yfs | -- IDSS Forward Transfer Admittance, | yfs | -- mS

No.8158-4/6 Embossed Taping Specifi cation 2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E

No.8158-5/6 Outline Drawing Land Pattern Example 2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E Mass (g) Unit 0.013 * For reference mm Unit: mm 0.950.95 1.0 2.4 0.8

PS No.8158-6/6 This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.