2SK3652 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
Low on-resistance, low Qg High avalanche resistance For high-speed switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage V DSS 230 V Gate-source surrender voltage V GSS 30 V Drain current I D 50 A Peak drain current I DP 200 A Avalanche energy capability * E AS 2 200 mJ Power dissipation Ta = 25 3 Power dissipation 100 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *L=1m H ,I L =5 0A ,VDD = 100 V, 1 pulse, Ta =2 5 WPD
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Gate-drain surrender voltage V DSS ID =1m A ,VGS =0 2 3 0 V Gate threshold voltage V th VDS =2 5V ,ID =1 0m A 2 4 V Drain-source cutoff current I DSS VDS = 184 V, VGS = 0 100 ìA Gate-source cutoff currentt I GSS VGS = 30 V, VDS =0 1 ìA Drain-source on resistance R DS(on) VGS =1 0V ,ID = 25 A 29 40 mÙ Forward transfer admittance Yfs VDS =2 5V ,ID = 25 A 17 35 S Short-circuit forward transfer capacitance C iss 5 950 pF Short-circuit output capacitance C oss 850 pF Reverse transfer capacitance C rss 80 pF Turn-on delay time t d(on) 65 ns Rise time t r 140 ns Turn-off delay time t d(off) 470 ns Fall time t f 145 ns Diode foward voltage V DSF IDR =5 0A ,VGS =0 - 1 . 5 V Reverse recovery time t rr L=2 3 0ì H ,VDD = 100 V 235 ns Reverse recovery charge Q rr IDR =2 5A ,di/dt = 100 A/ìs 1 180 nC Total gate charge Q g 105 nC Gate-source charge Q gs 40 nC Gate-drain charge Q gd 14 nC Channel-case heat resistance R th(ch-c) 1.25 /W Channel-atmosphere heat resistance R th(ch-a) 41.6 /W VDS =2 5V ,VGS =0 ,f=1M H z VDD = 100 V, ID =2 5A , VGS =1 0V VDD = 100 V, ID =2 5A , RL =4Ù , VGS =1 0V 2SK3652