2SK3641 KEXIN
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RDS(on)1 =14 m MAX. (VGS =1 0V ,ID =1 8 A ) RDS(on)2 =25 m MAX. (VGS =4 . 5V ,ID =1 5A ) Low Ciss:C iss = 930 pF TYP. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit D r a i nt os o u r c ev o l t a g e V DSS 30 V Gate to source voltage V GSS 20 V ID 36 A Idp * 140 A Power dissipation T C=25 29 TA=25 1.0 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current I DSS VDS=30V,VGS=0 10 A Gate leakage current I GSS VGS= 20V,VDS=0 10 A Gate cut off voltage V GS(off) VDS=10V,ID=1mA 1.5 2.5 V Forward transfer admittance Yfs VDS=10V,ID=18A 5.5 11 S RDS(on)1 VGS=10V,ID=18A 11 14 m RDS(on)2 VGS=4.5V,ID=15A 17 25 m Input capacitance C iss 930 pF Output capacitance C oss 250 pF Reverse transfer capacitance C rss 160 pF Turn-on delay time t on 9.4 ns Rise time t r 8.6 ns Turn-off delay time t off 34 ns Fall time tf 11 ns Total Gate Charge Q G 22 nC Gate to Source Charge Q GS 3.6 nC Gate to Drain Charge Q GD 7.4 nC Body Diode Forward Voltage Note V F(S-D) IF =3 6A ,VGS =0V 1 . 0 V Reverse Recovery Time t rr IF =3 6A ,VGS =0V 2 4 n s Reverse Recovery Charge Q rr di/dt = 100 A/ ìs 15 nC VDD = 24V VGS =1 0V ID =36A VDS=10V,VGS=0,f=1MHZ ID=18A,VGS(on)=15V,RG=10 ,VDD=10V Drain to source on-state resistance