2SK3640 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
34 A, 100 V. RDS(ON) = 32m @V GS =1 0V RDS(ON) = 35m @V GS =6V Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage V DSS 100 V Gate to Source Voltage V GS 20 V Drain Current Continuous (Note 1) 34 A Drain Current Pulsed 100 A Power dissipation @ T C=25 (Note 1) 83 Power dissipation @ Ta=25 (Note 1a) 3.8 Power dissipation @ Ta=25 (Note 1b) 1.6 Operating and Storage Temperature T J,T STG - 5 5t o1 7 5 Thermal Resistance Junction to Case R JC 1.8 /W Thermal Resistance Junction to Ambient R JA 96 /W ID PD W
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Single Pulse Drain-Source Avalanche Energy W DSS VDD =5 0V ,ID = 7.3A (Not 2) 360 mJ Maximum Drain-Source Avalanche Current I AR ( Not 2) 7.3 A Drain-Source Breakdown Voltage B VDSS VGS =0V ,I D =2 5 0 A 100 V Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25 92 mV/ Zero Gate Voltage Drain Current I DSS VDS =8 0V ,VGS =0V 1 A Gate-Body Leakage, Forward I GSSF VGS =2 0V ,VDS = 0 V 100 nA Gate-Body Leakage, Reverse I GSSR VGS =- 2 0V ,VDS =0V - 1 0 0 n A Gate Threshold Voltage V GS(th) VDS =V GS,I D =2 5 0 A 22 . 54 V Gate Threshold Voltage Temperature Coefficient ID = 250 A, Referenced to 25 -7.2 mV/ VGS =1 0V ,ID =7 . 3A 2 2 3 2 VGS =1 0V ,ID =7 . 3A , T J=1 2 5 39 56 VGS =6V ,I D =7 A, 24 35 On-State Drain Current I D(on) VGS =1 0V ,VDS =5V 2 5 A Forward Transconductance g FS VDS =5V ,I D =7 . 3A 1 5 3 1 S Input Capacitance C iss 2490 pF Output Capacitance C oss 265 pF Reverse Transfer Capacitance C rss 80 pF Turn-On Delay Time t d(on) 16 26 ns Turn-On Rise Time tr 10 18 ns Turn-Off Delay Time t d(off) 56 84 ns Turn-Off Fall Time t f 25 40 ns Total Gate Charge Q g 57 80 nC Gate-Source Charge Q gs 11 nC Gate-Drain Charge Q gd 15 nC Maximum Continuous Drain-Source Diode Forward Current IS 2.7 A Drain-Source Diode Forward Voltage V SD VGS =0V ,I S = 2.7 A (Not 2) 0.72 1.2 V VDS =5 0V ,ID =7 . 3A , VGS =1 0V (Note 2) mRDS(on)Static Drain-Source On-Resistance VDD =3 0V ,ID =1A , VGS =1 0V ,RGEN VDS =5 0V ,VGS =0V , f=1 . 0M H z KDD3670