2SK3639 KEXIN
Document overview
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Technical content
Features
RDS(on)1 =5 . 5m MAX. (VGS =1 0V ,ID =3 2A ) RDS(on)2 =8 . 5m MAX. (VGS =4 . 5V ,ID =3 2A ) Low Ciss:C iss = 2400 pF TYP. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 20 V Gate to source voltage V GSS 20 V ID 64 A Idp * 256 A Power dissipation T C=25 40 TA=25 1.0 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current I DSS VDS=20V,VGS=0 10 A Gate leakage current I GSS VGS= 20V,VDS=0 100 A Gate cut off voltage V GS(off) VDS=10V,ID=1mA 1.5 2.5 V Forward transfer admittance Yfs VDS=10V,ID=32A 19 39 S RDS(on)1 VGS=10V,ID=32A 4.4 5.5 m RDS(on)2 VGS=4.5V,ID=32A 5.8 8.5 m Input capacitance C iss 2400 pF Output capacitance C oss 970 pF Reverse transfer capacitance C rss 350 pF Turn-on delay time t on 13 ns Rise time t r 14 ns Turn-off delay time t off 71 ns Fall time tf 22 ns Total Gate Charge Q G 45 nC Gate to Source Charge Q GS 7.6 nC Gate to Drain Charge Q GD 11 nC VDD = 16V VGS =1 0V ID =64A VDS=10V,VGS=0,f=1MHZ ID=32A,VGS(on)=10V,RG=0 ,VDD=10V Drain to source on-state resistance