2SK3618

2SK3618 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 8A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 32 A Allowable Power Dissipation P D Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 100 V Zero-Gate Voltage Drain Current I DSS VDS =100V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Gate-to-Source Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =4A 4 7 S R DS (on)1 I D =4A, VGS =10V 100 130 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =4A, VGS =4V 130 180 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 880 pF Output Capacitance Coss V DS =20V, f=1MHz 80 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 55 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11.5 ns Rise Time t r See specified Test Circuit. 14 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 100 ns Fall Time t f See specified Test Circuit. 42 ns Marking : K3618 Continued on next page.

No.8325-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =50V, VGS =10V, ID =8A 24 nC Gate-to-Source Charge Qgs V DS =50V, VGS =10V, ID =8A 3.2 nC Gate-to-Drain “Miller” Charge Qgd V DS =50V, VGS =10V, ID =8A 5.5 nC Diode Forward Voltage V SD IS=8A, VGS =0V 0.9 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions Package Dimensions unit : mm unit : mm 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G S ID =4A R L=12.5Ω VDD =50V VOUTVIN D 2SK3618 ID -- VDS IT07979 ID -- VGS IT07022 0 5.0 4.50.50 10V 6V8V 4V V GS =3V V DS =10V Tc= --25 --25 25°C Tc=75 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A

No.8325-3/4 1.0 0.1 0.01 23 5 723 5 723 5 70.01 0.1 1.0 10 23 5 7 100 2 IT07983 Operation in this area is limited by RDS (on). 10µs100 µs 1ms10ms 100ms ID =8A IDP =32A DC operation (Tc=25 °C) R DS (on) -- VGS IT07980 R DS (on) -- Tc IT07981 180 10345678 --50 --25 0 25 50 75 100 125 1509 160 120 140 100 300 250 100 200 150 ID=4A, VGS=4V ID=4A, VGS=10V SW Time -- ID IT07028 IT07027 0.01 0.1 1.0 IS -- VSD IT07026 yfs -- ID --25 Tc=75 1.023 5 7 23 5 7 23 10 1.0 V DS =10V 25°C Tc= --25 75°C V GS =0V 100 0.1 1.023 5 7 23 5 7 23 5 10 V DD =50V V GS =10V td(off) tf tr td(on) Tc=25°C ID =4A 100 1000 305 1 52 02 510 Ciss, Coss, Crss -- VDS IT07029 f=1MHz Ciss Coss Crss VGS -- Qg IT07982 2520 51 0 1 5 V DS =50V ID =8A A S O <10µs Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °CGate-to-Source V oltage, VGS -- V Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse

No.8325-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. 20 40 0.25 0.75 0.50 80 100 120 1.00 1.25 140 160 PD -- Ta IT07984 PD -- Tc 20 40 80 100 120 140 160 IT07033Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Note on usage : Since the 2SK3618 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.