2SK3599-01MR FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=100V V GS=0V VDS=80V V GS=0V VGS=±30V ID=10A VGS=10V ID=10A VDS=25V VCC=48V ID=10A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 3.378 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=50V ID=20A VGS=10V L=222µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W kVrms 100 3.0 5.0 250 10 100 47 62 61 2 730 1095 190 285 12 18 12 18 3.8 6 23 35 8.5 13 22 33 9 13.5 1.10 1.65 0.17 -55 to +150 Outline Drawings (mm) Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< *4 VDS 100V<= www.fujielectric.co.jp/denshi/scd *5 VGS=-30V *6 t=60sec f=60Hz 200304 *1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C=<

2SK3599-01MR FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02468 1 0 1 2 20V 7.0V 10V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 1 02 03 04 05 06 0 0.00 0.03 0.06 0.09 0.12 0.15 0.18 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 8V7.5V6.0V VGS= 5.5V 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 350 400 IAS=12A IAS=17A IAS=29A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V

2SK3599-01MR FUJI POWER MOSFET VGS=f(Qg):ID=20A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω -50 -25 0 25 50 75 100 125 150 100 125 150 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] Vcc= 50V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A]

2SK3599-01MR FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]