2SK3592-01L FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=150V V GS=0V VDS=120V V GS=0V VGS=±30V ID=20A VGS=10V ID=20A VDS=25V VCC=48V ID=20A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.463 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=75V ID=40A VGS=10V L=123µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 150 3.0 5.0 250 10 100 31 41 13 26 1940 2910 310 465 24 36 20 30 26 39 50 75 20 30 52 78 15 22.5 18 27 1.10 1.65 0.14 0.77 -55 to +150 Outline Drawings (mm) Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< *4 VDS 150V<= www.fujielectric.co.jp/denshi/scd *5 VGS=-30V See to P4 *1 L=123µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C=< 200304

2SK3592-01L,S,SJ FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02468 1 0 1 2 120 160 20V 7.0V 10V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 40 80 120 160 0.00 0.03 0.06 0.09 0.12 0.15 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V 6.0V VGS= 5.5V 0 25 50 75 100 125 150 100 150 200 250 300 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 25 50 75 100 125 150 200 400 600 800 1000 IAS=23A IAS=57A IAS=35A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V

2SK3592-01L,S,SJ FUJI POWER MOSFET VGS=f(Qg):ID=40A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω -50 -25 0 25 50 75 100 125 150 100 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 02 0 4 0 6 0 8 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] Vcc= 75V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A]

2SK3592-01L,S,SJ FUJI POWER MOSFET Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] http://www.fujielectric.co.jp/denshi/scd/ Outline Drawings (mm) Type(S) Type(SJ) 1 2 3 1 Type(L) 1 2 3