2SK3588-01L_03 FUJI

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=100V V GS=0V VDS=80V V GS=0V VGS=±30V ID=25A VGS=10V ID=25A VDS=25V VCC=48V ID=25A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.463 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=50V ID=50A VGS=10V L=71.9µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 100 3.0 5.0 250 10 100 19 25 15 30 1830 2745 460 690 38 57 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.65 0.1 0.4 -55 to +150 Outline Drawings (mm) See to p4 Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< *4 VDS 100V<= www.fujielectric.co.jp/denshi/scd *5 VGS=-30V *1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C=< 200304

2SK3588-01L,S,SJ FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02468 1 0 1 2 120 160 200 20V 7.0V 10V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 40 80 120 160 200 0.00 0.03 0.06 0.09 0.12 0.15 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V 6.0V VGS= 5.5V 0 25 50 75 100 125 150 100 200 300 400 500 600 700 800 IAS=30A IAS=73A IAS=44A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 350 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]

2SK3588-01L,S,SJ FUJI POWER MOSFET VGS=f(Qg):ID=50A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω -50 -25 0 25 50 75 100 125 150 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 VGS(th) [V] Tch [°C] µA 0 2 04 06 08 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] Vcc= 50V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A]

2SK3588-01L,S,SJ FUJI POWER MOSFET Single Pulse Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] http://www.fujielectric.co.jp/denshi/scd/ Outline Drawings (mm) Type(S) Type(SJ) 1 2 3 1 Type(L) 1 2 3