2SK3586 FUJI
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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=100V V GS=0V VDS=80V V GS=0V VGS=±30V ID=25A VGS=10V ID=25A VDS=25V VCC=48V ID=25A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.926 62.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=50V ID=50A VGS=10V L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 100 3.0 5.0 250 10 100 19 25 15 30 1830 2745 460 690 38 57 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.65 0.1 0.4 -55 to +150 Outline Drawings (mm) TO-220AB Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<*1 L=223µH, Vcc=48V *2 Tch 150°C=< *4 VDS 100V<= www.fujielectric.co.jp/denshi/scd *5 VGS=-30V
2SK3586-01 FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0 25 50 75 100 125 150 100 125 150 175 200 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 25 50 75 100 125 150 100 200 300 400 500 EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A 02468 1 0 1 2 120 160 200 20V 7.0V 10V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 40 80 120 160 200 0.00 0.03 0.06 0.09 0.12 0.15 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V 6.0V VGS= 5.5V
2SK3586-01 FUJI POWER MOSFET VGS=f(Qg):ID=50A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω -50 -25 0 25 50 75 100 125 150 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 VGS(th) [V] Tch [°C] µA 0 2 04 06 08 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] Vcc= 50V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A]
2SK3586-01 FUJI POWER MOSFET IAV=f(tAV):starting Tch=25°C. Vcc=48V Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] Single Pulse Maximum Avalanche Current Pulsewidth Avalanche Current I AV [A] tAV [sec]