2SK3560 PANASONIC
Document overview
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Technical content
1Publication date: February 2004 SJG00033AED 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features
- Low on-resistance, low Qg
- High avalanche resistance ■ Absolute Maximum Ratings TC = 25°C 1: Gate 2: Drain 3: Source Unit: mm Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage V DSS ID = 1 mA, VGS = 0 230 V Diode forward voltage V DSF IDR = 30 A, VGS = 0 −1.5 V Gate threshold voltage V th VDS = 25 V, ID = 1 mA 2 4 V Drain-source cutoff current I DSS VDS = 184 V, VGS = 0 100 µA Gate-source cutoff currentt I GSS VGS = ±30 V, VDS = 0 ±1 µA Drain-source on resistance R DS(on) VGS = 10 V, ID = 15 A 55 74 m Ω Forward transfer admittance Yfs VDS = 25 V, ID = 15 A 8 19 S Short-circuit forward transfer capacitance C iss VDS = 25 V, VGS = 0, f = 1 MHz 2 330 pF (Common-source) Short-circuit output capacitance C oss 356 pF (Common-source) Reverse transfer capacitance C rss 44 pF (Common-source) Turn-on delay time t d(on) VDD ≈ 100 V, ID = 15 A 39 ns Rise time t r RL ≈ 6.7 Ω, VGS = 10 V 37 ns Turn-off delay time t d(off) 221 ns Fall time t f 46 ns Reverse recovery time t rr L = 230 µH, VDD = 100 V 164 ns Reverse recovery charge Q rr IDR = 15 A, di /dt = 100 A/ µs 853 nC 0 to 0.5 123 (8.9) (10.2) 0 to 0.3 (2.1) (6.4) (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 0.8±0.1 2.5±0.2 1.4±0.1 2.54±0.3 10.1±0.33.0±0.5 (1.4) 1.5±0.3 0.6±0.1 ■ Electrical Characteristics TC = 25°C ± 3°C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Rating Unit Drain-source surrender voltage V DSS 230 V Gate-source surrender voltage V GSS ±30 V Drain current ID 30 A Peak drain current I DP 120 A Power PD 50 W dissipation Ta = 25°C3 Channel temperature T ch 150 °C Storage temperature T stg −55 to +150 °C Internal Connection G S D
2 SJG00033AED
Safe operation area P C Ta Parameter Symbol Conditions Min Typ Max Unit Total gate charge Q g VDD = 100 V, ID = 25 A 51.2 nC Gate-source charge Q gs VGS = 10 V 8.2 nC Gate-drain charge Q gd 19.4 nC Channel-case heat resistance R th(ch-c) 2.5 °C/W Channel-atmosphere heat resistance R th(ch-a) 89.2 °C/W ■ Electrical Characteristics (Continued) TC = 25°C ± 3°C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 11 0 1 0 2 103 10−1 102 103 Non repetitive pulse TC = 25°C ID IDP t = 100 µs 1 ms 10 ms Drain-source voltage VDS (V) Drain current ID (A) 0 50 150 100 Collector power dissipation PC (W) Ambient temperature Ta (°C) (1) TC = Ta (2) Without heat sink (1) (2) 100
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