2SK3560 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low on-resistance, low Qg High avalanche resistance For high-speed switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage V DSS 230 V Gate-source surrender voltage V GSS 30 V Drain current I D 30 A Peak drain current I DP 120 A Power dissipation Ta = 25 3 Power dissipation 50 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 PD W 1.27 +0.1 -0.1 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.25.28 +0.2 -0.2 2.54+0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57+0.2 -0.2 0.4+0.2 -0.2 2.54 +0.2 -0.20.81+0.1 -0.1 TO-263 Unit: mm 1G a t e 2D r a i n
3 Source
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Gate-drain surrender voltage V DSS ID =1m A ,VGS =0 2 3 0 V Diode forward voltage V DSF IDR =3 0A ,VGS =0 - 1 . 5 V Gate threshold voltage V th VDS =2 5V ,ID =1m A 2 4 V Drain-source cutoff current I DSS VDS =1 8 4V ,VGS =0 1 0 0 ì A Gate-source cutoff currentt I GSS VGS = 30 V, VDS =0 1 ìA Drain-source on resistance R DS(on) VGS =1 0V ,ID = 15 A 55 74 mÙ Forward transfer admittance Yfs VDS =2 5V ,ID =1 5A 8 1 9 S Short-circuit forward transfer capacitance C iss 2 330 pF Short-circuit output capacitance C oss 356 pF Reverse transfer capacitance C rss 44 pF Turn-on delay time t d(on) VDD 100 V, ID =1 5A 39 ns Rise time t r RL 6.7 Ù, VGS =1 0V 37 ns Turn-off delay time t d(off) 221 ns Fall time t f 46 ns Reverse recovery time t rr L = 230 ìH, VDD = 100 V 164 ns Reverse recovery charge Q rr IDR =1 5A ,d i/ d t=1 0 0A /ì s 8 5 3 n C Total gate charge Q g VDD =1 0 0V ,ID = 25 A 51.2 nC Gate-source charge Q gs VGS =1 0V 8 . 2 n C Gate-drain charge Q gd 19.4 nC Channel-case heat resistance R th(ch-c) 2.5 /W Channel-atmosphere heat resistance R th(ch-a) 89.2 /W VDS =2 5V ,VGS =0 ,f=1M H z 2SK3560