2SK3541T2L

2SK3541T2L LITTELFUSE

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Rev.B 1/3 2.5V Drive Nch MOS FET 2SK3541 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zExternal dimensions (Unit : mm) (1)Gate (2)Source (3)Drain VMT3 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.80.2 0.2 (2)(1) Abbreviated symbol : KN zPackaging specifications T2L 8000 2SK3541 Type Package Code Basic ordering unit (pieces) Taping zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature V DSS VGSS PD∗2 Tch 30 V V mA mW ±20 ±100ID IDP∗1 Continuous Pulsed mA±400 150 150 Tstg °C−55 to +150 Symbol Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zEquivalent circuit Drain Source Gate ∗ Gate Protection Diode ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded.

Rev.B 2/3 zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Ciss |Yfs| Coss Crss Min. 0.8 1.0 1.5 − 71 3 µAV GS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=5V ID=10mA, VDS=3V VGS=0V f=1MHz V µA V Ω Ω pF mS pF pF t d(on) − 15 − ID=10mA, VDD 5Vns tr − 35 − VGS=5Vns td(off) − 80 − RL=500Ωns tf − 80 − RG=10Ωns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance zElectrical characteristic curves 0123450 0.05 0.1 0.15DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 3.5V 2.5V VGS=1.5V Fig.1 Typical output characteristics Ta=25°C Pulsed 0.1m 100m DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) 10m 0.2m 0.5m 50m 20m 200m Ta=125°C 75°C 25°C −25°C VDS=3V Pulsed Fig.2 Typical transfer characteristics −50 00 1.5 GATE THRESHOLD VOLTAGE : VGS(th) (V) CHANNEL TEMPERATURE : Tch (°C) 0.5 −25 25 50 75 100 125 150 VDS=3V ID=0.1mA Pulsed Fig.3 Gate threshold voltage vs. channel temperature 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 0.5

20 Ta=125°C

75°C 25°C −25°C VGS=4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current (Ι) 0.001 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=2.5V Pulsed DRAIN CURRENT : ID (A) Ta=125°C 75°C 25°C −25°C Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0 5 10 15 200 GATE-SOURCE VOLTAGE : VGS (V) ID=0.1A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed ID=0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage

Rev.B 3/3 −50 0 25 1500 CHANNEL TEMPERATURE : Tch (°C) −25 50 75 100 125 VGS=4V Pulsed ID=100mA ID=50mA STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Fig.7 Static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) 0.005 0.05 0.1 0.2 0.1 0.2 0.5 0.002 Ta=−25°C 25°C 75°C 125°C VDS=3V Pulsed Fig.8 Forward transfer admittance vs. drain current 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C Fig.9 Reverse drain current vs. source-drain voltage (Ι) 200mREVERSE DRAIN CURRENT : IDR (A) SOURCE-DRAIN VOLTAGE : VSD (V) 1.510.50 100m 50m 20m 10m 0.5m 0.2m 0.1m Ta=25°C Pulsed VGS=4V 0V Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) 0.1 CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : VDS (V) 0.5 0.2 0.5 1 2 5 10 20 50 Ciss Coss Crss Ta=25°C f=1MHZ VGS=0V Fig.11 Typical capacitance vs. drain-source voltage 0.1 500 SWITHING TIME : t (ns) DRAIN CURRENT : ID (mA) 0.2 0.5 1 2 5 10 20 50 100 200 1000 100 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed td(off) tr td(on) tf Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) zSwitching characteristics measurement circuit Fig.13 Switching time measurement circuit VGS RG VDS D.U.T. ID RL VDD 90% 50% 10% 90% 10% 50% Pulse width 10%VGS VDS 90% tf toff td (off) tr ton td (on) Fig.14 Switching time waveforms

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