2SK3535-01 FUJI

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Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=250V V GS=0V VDS=200V V GS=0V VGS=±30V ID=12.5A VGS=10V ID=12.5A VDS=25V VCC=72V ID=12.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA mΩ S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient Rth(ch-a) *4 channel to ambient 0.463 87.0 52.0 °C/W °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=75V VGS=0V f=1MHz VCC=72V ID=25A VGS=10V L=309 µH Tch=25°C IF=25A VGS=0V Tch=25°C IF=25A VGS=0V -di/dt=100A/µs Tch=25°C V V A A A V A mJ kV/µs kV/µs W W 250 3.0 5.0 250 10 100 75 100 81 6 2000 3000 220 330 15 30 20 30 30 45 60 90 20 30 44 66 14 21 16 24 1.10 1.65 0.45 1.5 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series Foot Print Pattern (1) Gate(G) (3) Source(S) [power line] (4) Drain(D) (2) Source(S) [signal line] VGS=30V Ta=25°C VDS 250V Ta=25°C *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C=< 200304

7.0V 10V 6.5V 7.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V Characteristics 2SK3535-01 FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°CID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [ °C] Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 2 04 06 08 0 1 0 0 0.00 0.05 0.10 0.15 0.20 0.25 7.0V6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V 6.0V VGS= 5.5V 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]

Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A] 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode 2SK3535-01 FUJI POWER MOSFET VGS=f(Qg):ID=25A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=72V, VGS=10V, RG=10Ω -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 0 Qg [C] Typical Gate Charge Characteristics VGS [V] 96V 72V Vcc= 36V -50 -25 0 25 50 75 100 125 150 120 150 180 210 240 270 RDS(on) [ m Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss

2SK3535-01 FUJI POWER MOSFET 0 25 50 75 100 125 150 IAV [A] starting Tch [°C] Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 0 1000 2000 3000 4000 5000 100Rth(ch-a) [°C/W] Drain Pad Area [mm Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 0 25 50 75 100 125 150 100 200 300 400 500 600 700 IAS=15A IAS=22A IAS=37A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec] http://www.fujielectric.co.jp/denshi/scd/