2SK3527-01_04 FUJI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V V GS=0V VDS=480V V GS=0V VGS=±30V ID=8.5A VGS=10V ID=8.5A VDS=25V VCC=300V ID=8.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.373 50.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=17A VGS=10V L=1.4mH Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W 600 3.0 5.0 250 10 100 0.29 0.37 10 20 2280 3420 290 435 16 24 26 39 37 56 78 117 13 19 54 81 15 23 20 30 0.93 1.50 0.7 10.0 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =< 200304 *1 L=1.4mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C=< *4 VDS 600V *5 V GS=-30V<= 11.6±0.2

2SK3527-01 FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0 2 4 6 8 10 12 14 16 18 20 20V 7.0V 10V 6.5V 6.0V ID [A] VDS [V] Typical Output Characteristics VGS=5.5V 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance 0 5 10 15 20 25 30 35 40 45 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 7.0V 6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 6.0V VGS= 5.5V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V 0 25 50 75 100 125 150 100 150 200 250 300 350 400 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]

2SK3527-01 FUJI POWER MOSFET VGS=f(Qg):ID=17A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω VGS(th)=f(Tch):VDS=VGS,ID=250µA -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th) [V] Tch [°C] 0 2 04 06 08 0 1 0 0 1 2 0 Vcc= 120V Vcc= 480V Qg [nC] Typical Gate Charge Characteristics VGS [V] Vcc= 300V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 200 400 600 800 1000 IAS=9A IAS=21A IAS=13A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V

2SK3527-01 FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]