2SK3521-01L FUJI
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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=500V V GS=0V VDS=400V V GS=0V VGS=±30V ID=4A VGS=10V ID=4A VDS=25V VCC=300V ID=4A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC nsMin. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.92 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=250V ID=8A VGS=10V L=4.98mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C V A A V A mJ kV/µs kV/µs W 500 3.0 5.0 250 10 100 0.65 0.85 3.5 7 750 1130 100 150 4.0 6.0 14 21 91 4 24 36 20 30 8.5 13 5.5 8.5 1.00 1.50 0.65 3.5 -55 to +150 Outline Drawings Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<*1 L=4.98mH, Vcc=50V *2 Tch 150°C=< *4 VDS 500V<=
0 2 4 6 8 1 01 21 41 61 82 02 22 42 62 83 0 20V 10V 7.5V 7.0V ID [A] VDS [V] Typical Output Characteristics VGS=6.5V Characteristics 2SK3521-01L,S,SJ FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 0.1 100gfs [S] ID [A] Typical Transconductance 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V7.0VVGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]
0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode 2SK3521-01S,L,SJ FUJI POWER MOSFET VGS=f(Qg):ID=8A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω 0 1 02 03 04 05 06 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] 400V 250V Vcc= 100V 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA VGS(th) [V] Tch [°C]
2SK3521-01L,S,SJ FUJI POWER MOSFET IAV=f(tAV):starting Tch=25°C. Vcc=50V Avalanche current I AV [A] Single Pulse Maximum Avalanche Current Pulsewidth tAV [sec] PRE-SOLDER See Note: 1. Trademark Lot No. Type name Note: 1. Guaranteed mark of avalanche ruggedness. CONNECTION GATE DRAIN SOURCE DIMENSIONS ARE IN MILLIMETERS. FUJI POWER MOS FET 123 1 Outline Drawings (mm) Type(L) GATE DRAIN SOURCE See Note: 1. Trademark Lot No. DIMENSIONS ARE IN MILLIMETERS. Type name FUJI POWER MOS FET CONNECTION Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. Pre-Solder Fig. 1. Fig. 1. OUT VIEW Solder Plating Type(S) GATE DRAIN SOURCE See Note: 1. Trademark Lot No. Type name FUJI POWER MOS FET CONNECTION Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. OUT VIEW Fig. 1. Fig. 1. Solder Plating Pre-Solder DIMENSIONS ARE IN MILLIMETERS. Type(SJ) Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [/W] t [sec]